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Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms

Published

Author(s)

Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Stewart Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell

Abstract

Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the electrical measurements provide a non-destructive and efficient method for determining CD values and for enabling fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier metal films. This paper reports on the results of tests which have been conducted to evaluate various extraction methods for sheet resistance and line width values from the current design.
Citation
IEEE Transactions on Semiconductor Manufacturing
Volume
21
Issue
4

Keywords

copper, critical dimension (CD), electrical critical dimension (ECD), electrical test structure, line width, metrology

Citation

Shulver, B. , Bunting, A. , Gundlach, A. , Haworth, L. , Ross, A. , Smith, S. , Snell, A. , Stevenson, J. , Walton, A. , Allen, R. and Cresswell, M. (2008), Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms, IEEE Transactions on Semiconductor Manufacturing, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32758 (Accessed June 21, 2024)

Issues

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Created November 2, 2008, Updated October 12, 2021