NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Liangchun (. Yu, Kin P. Cheung, Jason P. Campbell, John S. Suehle, Kuang Sheng
Abstract
Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore highly desirable. However, it has long been a common believe that the gate oxide breakdown reliability is a show-stopper, particularly at high temperature where SiC devices are expected to excel. In this paper, we report that the thermally grown gate oxide on 4H-SiC is intrinsically reliable even at temperature as high as 375°C. We further show that even with the current SiC processing technology, devices with 10 cm2 active area can still achieve 100-year lifetime @ E<2.9MV/cm and 375°C.
Proceedings Title
2008 IEEE International Integrated Reliability Workshop
Yu, L.
, Cheung, K.
, Campbell, J.
, Suehle, J.
and Sheng, K.
(2008),
Oxide Reliability of SiC MOS Devices, 2008 IEEE International Integrated Reliability Workshop, South Lake Tahoe, NV, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900182
(Accessed October 3, 2025)