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Oxide Reliability of SiC MOS Devices

Published

Author(s)

Liangchun (. Yu, Kin P. Cheung, Jason P. Campbell, John S. Suehle, Kuang Sheng

Abstract

Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore highly desirable. However, it has long been a common believe that the gate oxide breakdown reliability is a show-stopper, particularly at high temperature where SiC devices are expected to excel. In this paper, we report that the thermally grown gate oxide on 4H-SiC is intrinsically reliable even at temperature as high as 375°C. We further show that even with the current SiC processing technology, devices with 10 cm2 active area can still achieve 100-year lifetime @ E<2.9MV/cm and 375°C.
Proceedings Title
2008 IEEE International Integrated Reliability Workshop
Conference Dates
October 12-16, 2008
Conference Location
South Lake Tahoe, NV

Citation

Yu, L. , Cheung, K. , Campbell, J. , Suehle, J. and Sheng, K. (2008), Oxide Reliability of SiC MOS Devices, 2008 IEEE International Integrated Reliability Workshop, South Lake Tahoe, NV, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900182 (Accessed July 15, 2024)

Issues

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Created October 12, 2008, Updated February 19, 2017