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Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates

Abstract

We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron trapping/detrapping behavior is only observable for very fast measurement times (<10usecs) and has significant implications to the current understanding of the NBTI phenomenon and consequent lifetime predictions.
Proceedings Title
Proceedings of the 2008 Symposium on VLSI Technology
Conference Dates
June 17-19, 2008
Conference Location
Honolulu, HI
Conference Title
2008 Symposium on VLSI Technology

Keywords

NBTI, electron trapping, hole trapping, fast-IDVG

Citation

Campbell, J. , Cheung, K. , Suehle, J. and Oates, A. (2008), Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications, Proceedings of the 2008 Symposium on VLSI Technology, Honolulu, HI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32983 (Accessed April 15, 2024)
Created June 17, 2008, Updated February 19, 2017