Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer

Published

September 1, 2008

Author(s)

David R. Black, Ning Zhang, M Dudley, X Huang, Y Chen

Abstract

The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide wafer have been studied. The density of TSDs ranges between 1.6×103/cm2 and 7.1×103/cm2 and the lowest density is observed at positions approximately half radius off the wafer center. The dislocation sense of elementary threading screw dislocations can be readily revealed by the asymmetric contrast of their images in grazing-incidence x-ray topographs using pyramidal plane reflections. The circumferential and radial distributions of the sense of elementary threading screw dislocations have been studied and no clear trends are observed in either distribution.

Citation

Journal of Electronic Materials

Pub Type

Journals

Keywords

dislocation sense, sense distribution, threading screw dislocation

Citation

Black, D. , Zhang, N. , Dudley, M. , Huang, X. and Chen, Y. (2008), Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer, Journal of Electronic Materials (Accessed October 12, 2025)