Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer

Published

Author(s)

David R. Black, Ning Zhang, M Dudley, X Huang, Y Chen

Abstract

The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide wafer have been studied. The density of TSDs ranges between 1.6×103/cm2 and 7.1×103/cm2 and the lowest density is observed at positions approximately half radius off the wafer center. The dislocation sense of elementary threading screw dislocations can be readily revealed by the asymmetric contrast of their images in grazing-incidence x-ray topographs using pyramidal plane reflections. The circumferential and radial distributions of the sense of elementary threading screw dislocations have been studied and no clear trends are observed in either distribution.
Citation
Journal of Electronic Materials

Keywords

dislocation sense, sense distribution, threading screw dislocation

Citation

Black, D. , Zhang, N. , Dudley, M. , Huang, X. and Chen, Y. (2008), Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer, Journal of Electronic Materials (Accessed June 18, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 1, 2008, Updated October 17, 2019