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The transient behavior of NBTI - A new prospective

Published

Author(s)

Kin P. Cheung, Jason P. Campbell

Abstract

The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot topic. The major NBTI debates center on the responsible mechanism, the proper measurement method, and the possible impact on reliability. We show that the observed fast transient degradation is a consequence of high-field stressing and has nothing to do with 'traditional' NBTI. We further show that most current NBTI experiments fail to capture an additional transient component that can potentially impact reliability more severely.
Proceedings Title
Proceedings of the The 9th International Conference on Solid-State
and Integrated-Circuit Technology
Conference Dates
October 20-23, 2008
Conference Location
Beijing, CH
Conference Title
The 9th International Conference on Solid-State
and Integrated-Circuit Technology

Keywords

NBTI, electron trapping, fast-IDVG

Citation

Cheung, K. and Campbell, J. (2008), The transient behavior of NBTI - A new prospective, Proceedings of the The 9th International Conference on Solid-State and Integrated-Circuit Technology , Beijing, CH, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33052 (Accessed June 16, 2024)

Issues

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Created October 17, 2008, Updated February 19, 2017