NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Organic single crystal field-effect transistors of a soluble anthradithiophene
Published
Author(s)
Oana Jurchescu, Sankar Subramanian, R J. Kline, Steven D. Hudson, John E. Anthony, Thomas Jackson, David J. Gundlach
Abstract
We use single crystals (grown by physical vapor transport) of a soluble oligomer to obtain a better understanding of the intrinsic properties, limitations and potential of these materials. Single crystals are well-suited for studies exploring the effects of chemical structure and molecular packing separate from solvent effects. We report on the fabrication of organic field-effect transistors from 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) single crystals. Gen- eral characteristics of these devices are high mobilities (6 cm2/(Vs)), large current on/off ratios (Ion/Ioff = 10^8), small subthreshold slopes (S = 1 V/dec) and extremely small hysteresis in the current-voltage characteristics.
Jurchescu, O.
, Subramanian, S.
, Kline, R.
, Hudson, S.
, Anthony, J.
, Jackson, T.
and Gundlach, D.
(2008),
Organic single crystal field-effect transistors of a soluble anthradithiophene, Chemistry of Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32830
(Accessed October 2, 2025)