Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Organic single crystal field-effect transistors of a soluble anthradithiophene

Published

Author(s)

Oana Jurchescu, Sankar Subramanian, R J. Kline, Steven D. Hudson, John E. Anthony, Thomas Jackson, David J. Gundlach

Abstract

We use single crystals (grown by physical vapor transport) of a soluble oligomer to obtain a better understanding of the intrinsic properties, limitations and potential of these materials. Single crystals are well-suited for studies exploring the effects of chemical structure and molecular packing separate from solvent effects. We report on the fabrication of organic field-effect transistors from 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) single crystals. Gen- eral characteristics of these devices are high mobilities (6 cm2/(Vs)), large current on/off ratios (Ion/Ioff = 10^8), small subthreshold slopes (S = 1 V/dec) and extremely small hysteresis in the current-voltage characteristics.
Citation
Chemistry of Materials
Volume
20
Issue
21

Keywords

mobility, organic field effect transistors, single crystals

Citation

Jurchescu, O. , Subramanian, S. , Kline, R. , Hudson, S. , Anthony, J. , Jackson, T. and Gundlach, D. (2008), Organic single crystal field-effect transistors of a soluble anthradithiophene, Chemistry of Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32830 (Accessed October 11, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 22, 2008, Updated January 27, 2020