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Improved Performance of Schottky Diodes on Pendeo-Epitaxial Gallium Nitride



Lawrence H. Robins, T Zheleva, M Derenge, D Ewing, P Shah, K Jones, U Lee


We designed experiments to investigate the role of the dislocation density on the performance of Schottky diodes fabricated on GaN material grown conventionally and by pendeo-epitaxy.  Devices of varying geometries were fabricated on the low defect density GaN regions grown selectively via pendeo-epitaxy; in addition, corresponding devices were fabricated on the conventional GaN material, which has a high density of dislocations. A broad range of material characterization techniques was employed in order to establish the optimized growth and device processing parameters. Schottky diodes fabricated on pendeo material showed nearly two orders of magnitude lower leakage current and displayed nearly ideal I-V characteristics, while diodes built on conventional material displayed non-ideal characteristics. Optimization of the metal-semiconductor contacts in devices fabricated on pendeo-epitaxial GaN is expected to lead to further improvement in Schottky diode performance and reliability.
Applied Physics Letters


cathodoluminescence scanning electron microscopy, current-voltage characteristics, dislocations in crystalline semiconductors, gallium nitride, pendeo-epitaxy, metal-semiconductor contacts, Schottky diodes


Robins, L. , Zheleva, T. , Derenge, M. , Ewing, D. , Shah, P. , Jones, K. and Lee, U. (2008), Improved Performance of Schottky Diodes on Pendeo-Epitaxial Gallium Nitride, Applied Physics Letters, [online], (Accessed June 24, 2024)


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Created September 1, 2008, Updated February 19, 2017