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Improved Performance of Schottky Diodes on Pendeo-Epitaxial Gallium Nitride

Published

Author(s)

Lawrence H. Robins, T Zheleva, M Derenge, D Ewing, P Shah, K Jones, U Lee

Abstract

We designed experiments to investigate the role of the dislocation density on the performance of Schottky diodes fabricated on GaN material grown conventionally and by pendeo-epitaxy.  Devices of varying geometries were fabricated on the low defect density GaN regions grown selectively via pendeo-epitaxy; in addition, corresponding devices were fabricated on the conventional GaN material, which has a high density of dislocations. A broad range of material characterization techniques was employed in order to establish the optimized growth and device processing parameters. Schottky diodes fabricated on pendeo material showed nearly two orders of magnitude lower leakage current and displayed nearly ideal I-V characteristics, while diodes built on conventional material displayed non-ideal characteristics. Optimization of the metal-semiconductor contacts in devices fabricated on pendeo-epitaxial GaN is expected to lead to further improvement in Schottky diode performance and reliability.
Citation
Applied Physics Letters
Volume
93
Issue
9

Keywords

cathodoluminescence scanning electron microscopy, current-voltage characteristics, dislocations in crystalline semiconductors, gallium nitride, pendeo-epitaxy, metal-semiconductor contacts, Schottky diodes

Citation

Robins, L. , Zheleva, T. , Derenge, M. , Ewing, D. , Shah, P. , Jones, K. and Lee, U. (2008), Improved Performance of Schottky Diodes on Pendeo-Epitaxial Gallium Nitride, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853617 (Accessed June 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 1, 2008, Updated February 19, 2017