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Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs

Published

Author(s)

Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour

Abstract

The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and extending the previously developed physics-based silicon buffer layer IGBT electro-thermal model and IGBT Model Parameter extrACtion Tools (IMPACT) to include SiC specific device and material properties. The validated simulation results in this paper demonstrate that the new electro-thermal Saber model for high-voltage SiC buffer layer n-channel IGBTs can be used to describe the static and dynamic behaviors for a wide range of device designs and circuit conditions for IGBTs with blocking voltages from 12 kV to 20 kV. The new physics-based model provides both device and circuit predictive capability.
Conference Dates
September 14-18, 2014
Conference Location
Pittsburgh, PA
Conference Title
IEEE Energy Conversion Congress and Expo 2014 (ECCE 2014)

Citation

Duong, T. , Hefner, A. , Ortiz, J. , Ryu, S. , , E. , , L. , , S. and W., J. (2014), Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs, IEEE Energy Conversion Congress and Expo 2014 (ECCE 2014), Pittsburgh, PA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=916319 (Accessed January 25, 2022)
Created September 15, 2014, Updated February 19, 2017