U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Kin (Charles) Cheung (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 76 - 100 of 127

High Speed Endurance and Switching Measurements for Memristive Switches

March 6, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient

Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction

December 15, 2011
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, Chadwin Young, John S. Suehle
We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than

When Does a Circuit Really Fail?

December 15, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Tony Oates, Phillip Wong, John S. Suehle

High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch

October 8, 2011
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of

Circuit-Aware Device Reliability Criteria Methodology

September 12, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Anthony Oates, John S. Suehle, Phillip Wong
Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might be a

High Mobility Channel from the Prospective of Random Telegraph Noise

September 12, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This

A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices

August 1, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Series resistance has become a serious obstacle inhibiting the performance of advanced CMOS devices. However, series resistance quantification in these same advanced CMOS devices is becoming exceedingly difficult. In this study, we demonstrate a very

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

June 6, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle
The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for

A Physics-Based Simple Series Resistance Extraction Methodology

June 1, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Series resistance has become a serious obstacle encountered in the development of advanced CMOS devices. At the same time, series resistance quantification in these same advanced CMOS devices is a difficult challenge. In this study, we demonstrate a very

On The Magnitude of Random Telegraph Noise in Ultra-Scaled MOSFETs

May 2, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make separation

A new interface defect spectroscopy method

April 26, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Vinny Tilak, Jody Fronheiser

A new interface defect spectroscopy method

April 13, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Jason P. Campbell, Fei Zhang, Chen Wang, John S. Suehle, Vinny Tilak, Jody Fronheiser

A New Interface Defect Spectroscopy Method

April 12, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, C Wang, Jason P. Campbell, John S. Suehle, Vinayak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing

A New Interface Defect Spectroscopy Method

April 11, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing

Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

January 3, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates
Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon in most

The Role of High-Field Stress in the Negative Bias Temperature Instability

December 1, 2010
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
In this study, a fast drain current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodology

Defect depth profiling in gate dielectrics

September 29, 2010
Author(s)
Kin P. Cheung
Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of methods

Reliability Issues of SiC MOSFETs: A Technology for High Temperature Environments

September 20, 2010
Author(s)
Liangchun (. Yu, Greg Dunne, Kevin Matocha, Kin P. Cheung, John S. Suehle, Kuang Sheng
The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The MOS-controlled power devices are the most favorable structure, however, it is widely believed that silicon oxide on