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Defect depth profiling in gate dielectrics

Published

Author(s)

Kin P. Cheung

Abstract

Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of methods avaliable for gate dielectric defect depth profiling. The valididty of these techniques are controversial. This paper addresss many of the points involved in the debate from basic physics prospective.

Keywords

gate dielectric, defects, CMOS

Citation

Cheung, K. (2010), Defect depth profiling in gate dielectrics (Accessed April 16, 2024)
Created September 29, 2010, Updated February 19, 2017