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PUBLICATIONS

Defect depth profiling in gate dielectrics

Published

Author(s)

Kin P. Cheung

Abstract

Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of methods avaliable for gate dielectric defect depth profiling. The valididty of these techniques are controversial. This paper addresss many of the points involved in the debate from basic physics prospective.
Pub Type
Talks

Keywords

gate dielectric, defects, CMOS
Semiconductors

Citation

Cheung, K. (2010), Defect depth profiling in gate dielectrics (Accessed October 25, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created September 29, 2010, Updated February 19, 2017
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