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Boulder

Dynamic EUV Metrology of Nanoscopic Thermal Transport in Active Devices

An urgent objective of the microelectronics industry is to mitigate the extreme heat densities generated within devices that are limiting the performance of

Today, device performance needs to be evaluated to determine success of materials development. This project will advance metrology for magnetic materials and develop models to predict device performance.

High Speed Metrology for Magnetoelectronic Devices and Models

Ferromagnet-based microelectronic devices play an increasingly important role within the semiconductor ecosystem. Magnetic RAM (MRAM) is already replacing

EUV Scatterometry

The state of the art for measurement and inspection of the smallest printed features on an integrated circuits (IC) chip is a combination of electron scanning

Electro-acoustic Metrology of Piezoelectric Materials for Wireless Communications

Microwave acoustic resonators are widely used to filter signals on multiple frequency bands for mobile communications. To predict filter performance, industry

a conceptual diagram of a gate-all-around (GAA) field-effect transistor

Causal Green's function simulations of phonons for multiscale/multiphysics modeling of thermal transport in gate-allaround transistors

This project employs a causal Green’s function (CGF) method to model thermal transport in nanoscale semiconductors, overcoming limitations posed by the Fourier

CalNet

Semiconductor measurement labs struggle to measure Scattering (S-) parameters—how electrical signals travels through and reflect off—of integrated circuits

Metrology of Materials, Surfaces, and Processes for Hybrid Advanced Packaging

Advanced bonding and integration physically bring together components, devices, and materials that are produced separately. There are strong economic and

Metrology for Integration of New Magnetic Materials

Electromagnetic (EM) systems use magnetic components such as inductors, isolators, and adaptive filters, but these are currently bulky and difficult to

Characterization of Nano-to-Microscale Process-Induced Thermo-Mechanical Changes in Heterogeneously Integrated Microelectronics

Some of the manufacturing difficulties encountered by the heterogeneous integration of modular chips in system-in-package are due to thermal management and

Advancing Power Electronics with Defect Metrology

The exponential growth in the power electronics market requires efficient devices based on wide bandgap (WBG) semiconductors. The yield of power devices is

Nanoscale, Element-Specific X-ray Imaging for Integrated Circuit Metrology

A current lack of 3D characterization tools that meet semiconductor industry needs is hampering manufacturing fidelity and supply chain security. Developing new

Non-Destructive Semiconductor Structure Function and Process Optimization for future Microelectronics Manufacturing at the NIST NSLS-II Beamline for XAFS and Diffraction

NIST Synchrotron beamline characterization of advanced semiconductor materials structure, chemical, electronic, and strain properties has been an ongoing

Shrinking Technology, Expanding Horizons: Compact Chips Advance Precision Timing for Communications, Navigation and Other Applications

March 6, 2024

This technology shrinks a tabletop system into a chip-sized format, reducing power usage and making it more applicable for use in everyday devices.

Postdoctoral position: Superconducting single-photon detector design, fabrication and testing

The Applied Physics Division at NIST seeks qualified postdoctoral researchers to design, fabricate, and test a new type of superconducting...

Postdoctoral position: Magnetics-based imaging and/or sensing

Postdoctoral Position at NIST in Boulder, Colorado The National Institute of Standards and Technology (NIST) anticipates the need for a...

NIST Physicist Sae Woo Nam, Pioneer in Single-Photon Detectors, Passes Away

March 1, 2024

During his 25-year career at NIST, Sae Woo performed groundbreaking work. He died in January at 53.

Kinetic Inductance Spectrophotometry

The Kinetic Inductance Spectrophotometry Project is developing novel superconducting detector and readout technologies targeting next generation large-scale

ACMD Seminar: Toward Parameter-free Restoration of Noisy Orientation Maps

Prashant Athavale Assistant Professor, Mathematics Dept., Clarkson University Tuesday, March 19, 2024, 3:00-4:00 PM ET (1:00-2:00 PM MT) A...

WWVB 2023 Antenna Configuration and Power Outages

Date MJD Began (UTC) Ended (UTC) Antenna Configuration Radiated Power (kW) 15 November 2023 60263 1752 2209 North 30 kW 21 - 23 October 2023...

2023 WWVB Broadcast Outages

Date MJD Began (UTC) Ended (UTC) 26 September 2023 60213 0745 0827 01 August 2023 60157 0132 0207 22 July 2023 60147 0134 0144 12 July 2023...

NIST Researchers Use Cellphone Compass to Measure Tiny Concentrations of Compounds Important for Human Health

April 1, 2024

Nearly every modern cellphone has a built-in compass, or magnetometer, that detects the direction of Earth’s magnetic field, providing critical information for

Overcoming Barriers: Nanoscale Interface Metrology and Electrical Characterization for Advanced Electronics

As devices become smaller, more complex, and more highly integrated, interfaces are increasingly important and limiting. The ability to accurately predict

Images depicting an advanced analysis of HR-EBSD data

Strain Measurement for Semiconductor Devices and Packages

Mechanical strain impacts the performance of semiconductor devices. Manufacturing processes must be carefully controlled for strain to achieve high-yield and

Electron-Solid Interactions

Fundamental understanding of electron-solid interactions is key to interpreting electron microscopy images for quantitative metrology. Scanning electron

Accurate Mapping of Thermal Properties at the Nanoscale

Precise measurements of thermal properties at the nanoscale are needed to engineer advanced and heterogeneously integrated devices, but measurements at this

Advanced Metrology to Enable Next Generation EUV Photoresists

The semiconductor industry continues to push for smaller features, more integration, and increased yield. New photoresist chemistries and advances in extreme

Diagram of the CDSAXS method, shows an x-ray beam going through a sample and onto an e-ray detector.

Critical Dimension Small Angle X-Ray Scattering (CDSAXS) for Next Generation in-line Metrology

The semiconductor industry is in need of new, high throughput in-line dimensional metrology methods to characterize next generation 3D nanostructures. The

Job Opportunity: Research Associate Position, Scientific Software and Firmware Development

LOCATION: NIST (Boulder, Colorado), Quantum Sensors Division (687), Quantum Electronics Group (14) The Quantum Sensors Division of NIST...

Job Opportunity: Research Associate Position, Boulder Cryogenic Quantum Testbed

LOCATION: NIST (Boulder, Colorado), Quantum Sensors Division (687), Quantum Electronics Group (14) The Quantum Sensors Division of NIST...

Job Opportunity: Research Associate Position, Development of Quantum Calorimeters

LOCATION: NIST (Boulder, Colorado), Quantum Sensors Division (687), Quantum Calorimeters Group (12) SUMMARY OF THE POSITION: The Quantum...

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