March 10, 2011
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose M. Ortiz, Eugene Imhoff, Jerry Sherbondy
A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of both