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Search Publications by Tam Duong

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Displaying 1 - 17 of 17

Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

Author(s)
Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area

High-Voltage Capacitance Measurement System for SiC Power MOSFETs

Author(s)
Parrish Ralston, Tam H. Duong, Nanying Yang, David W. Berning, Colleen E. Hood, Allen R. Hefner Jr., Kathleen Meehan
Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power