Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module

Published

June 13, 2008

Author(s)

Tam H. Duong, Jose M. Ortiz, R. N. Raju, Allen R. Hefner Jr.

Abstract

This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II program and will be used in construction of the 13.8 kV, 2.75 MVA SSPS developed in the Phase III program. The simulations are performed using recently developed and validated physics-based electrical and thermal models. The total device active areas and the various gate resistances and inductances are optimized in order to minimize overall power dissipation. A detailed description of the loss mechanisms and the simulation results for a representative SSPS topology is also presented.

Proceedings Title

Proc., Power Electronics Specialist Conference

Conference Dates

June 15-19, 2008

Conference Location

Rhodes, 1, GR

Conference Title

Power Electronics Specialist Conference

Pub Type

Conferences

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Keywords

Silicon carbide, high-voltage, high-frequency, MOSFET, Junction Barrier Schottky (JBS), half-bridge power module, Solid State Power Substation.

Citation

Duong, T. , Ortiz, J. , Raju, R. and Hefner Jr., A. (2008), Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module, Proc., Power Electronics Specialist Conference, Rhodes, 1, GR, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33006 (Accessed July 2, 2025)