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Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

Published

Author(s)

Tam H. Duong, David Berning, Allen R. Hefner Jr., Keyue M. Smedley

Abstract

This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5-kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 10 kV SiC MOSFETs and PiN diodes.
Proceedings Title
The Applied Power Electronics Conference and Exposition
Conference Dates
February 25-March 1, 2007
Conference Location
Anaheim, CA, USA

Keywords

Reliability test system, silicon carbide, high-voltage, high-frequency, power devices

Citation

Duong, T. , Berning, D. , Hefner Jr., A. and Smedley, K. (2007), Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices, The Applied Power Electronics Conference and Exposition, Anaheim, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32547 (Accessed June 12, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 24, 2007, Updated October 12, 2021