Automated Parameter Extraction Software for Silicon and High-Voltage Silicon Carbide Power Diodes

Published

June 24, 2010

Author(s)

Nanying Yang, Tam H. Duong, Jeong-O Jeong, Jose M. Ortiz, Allen R. Hefner Jr., Kathleen Meehan

Abstract

This paper presents an automated parameter extraction software tool developed for constructing Silicon (Si) and Silicon Carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data necessary to establish a library of power diode component models in Synopsys Saber and provides a method for quantitatively comparing between different types of devices and establishing performance metrics for device development. To verify the accuracy of DIMPACT, the extracted model parameter sets are incorporated into Saber to compare model predictions with measured static and transient diode characteristics. In this paper, the DIMPACT parameter extraction results are demonstrated for a 45 V, 15 A Si Schottky diode, a 600 V, 200 A Si PiN diode, a 10 kV, 5 A SiC JBS diode, and a 10 kV, 20 A SiC PiN diode. The validation results indicate that the model parameters extracted using DIMPACT are accurate.

Proceedings Title

Proceedings of the IEEE COMPEL Workshop 2010

Conference Dates

June 28-30, 2010

Conference Location

Boulder, CO

Conference Title

IEEE COMPEL 2010

Pub Type

Conferences

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Keywords

Power diodes, SiC, parameter extraction

Citation

Yang, N. , Duong, T. , Jeong, J. , Ortiz, J. , Hefner, A. and Meehan, K. (2010), Automated Parameter Extraction Software for Silicon and High-Voltage Silicon Carbide Power Diodes, Proceedings of the IEEE COMPEL Workshop 2010, Boulder, CO, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905858 (Accessed October 14, 2025)