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Search Publications by: Andras E. Vladar (Fed)

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Displaying 51 - 75 of 371

Scanning electron microscope measurement of width and shape of 10 nm patterned lines using a JMONSEL-modeled library

July 1, 2015
Author(s)
John S. Villarrubia, Andras Vladar, Bin Ming, Regis J. Kline, Daniel F. Sunday, Jasmeet Chawla, Scott List
The width and shape of 10 nm to 12 nm wide lithographically patterned SiO2 lines were measured in the scanning electron microscope by fitting the measured intensity vs. position to a physics-based model in which the lines’ widths and shapes are parameters

NIST-TAPPI Workshop on Measurement Needs for Cellulose Nanomaterial

June 23, 2015
Author(s)
Chelsea S. Davis, Robert J. Moon, Sean Ireland, Linda Johnston, Jo Anne Shatkin, Kim Nelson, E. J. Foster, Aaron M. Forster, Michael T. Postek, Andras Vladar, Jeffrey W. Gilman
A one-day workshop focused on the Measurement Needs for Cellulosic Nanomaterials was organized by the National Institute of Standards and Technology and held in conjunction with the 2014 TAPPI International Conference on Nanotechnology for Renewable

Nanometer level sampling and control of a scanning electron microscope

June 2, 2015
Author(s)
Bradley N. Damazo, Andras Vladar, Olivier M. Marie-Rose, John A. Kramar
The National Institute of Standards and Technology (NIST) is developing a specialized, metrology scanning electron microscope (SEM), having a metrology sample stage measured by a 38 picometer resolution, high-bandwidth laser interferometer system. The

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression

March 19, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Bin Ming, Andras Vladar, John S. Villarrubia
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for

Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection

February 11, 2015
Author(s)
Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Andras Vladar, Richard M. Silver
Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography

New Insights into Subsurface Imaging of Carbon Nanotubes in Polymer Composites via Scanning Electron Microscopy

February 4, 2015
Author(s)
Minhua Zhao, Bin Ming, Jae-Woo Kim, Luke J. Gibbons, Xiaohong Gu, Tinh Nguyen, Cheol Park, Peter T. Lillehei, John S. Villarrubia, Andras Vladar, James A. Liddle
Despite many studies of subsurface imaging of carbon nanotube (CNT)-polymer composites via scanning electron microscopy (SEM), significant controversy exists concerning the imaging depth and contrast mechanisms. We studied CNT-polyimide composites and, by

3D Monte Carlo modeling of the SEM: Are there applications to photomask metrology?

October 23, 2014
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The ability to model the effect of fields due to charges trapped in insulators with floating conductors has been added to JMONSEL (Java Monte Carlo simulator for Secondary Electrons) and applied to a simple photomask metal on glass geometry. These

Does Your SEM Really Tell the Truth? How Would You Know? Part 2

May 30, 2014
Author(s)
Michael T. Postek, Andras Vladar, Premsagar P. Kavuri
The scanning electron microscope (SEM)has gone through a tremendous evolution to become indispensable for many and diverse scientific and industrial applications. The improvements have significantly enriched and augmented the overall SEM performance and