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Search Publications by: Richard A. Allen (Fed)

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Displaying 76 - 100 of 133

Critical Dimension Calibration Standards for ULSI Metrology

September 30, 2003
Author(s)
Richard A. Allen, Michael W. Cresswell, Christine E. Murabito, Ronald G. Dixson, E. Hal Bogardus
NIST and International SEMATECH are developing single-crystal reference materials for use in evaluating and calibrating critical dimension (CD), that is linewidth, metrology tools. Primary calibration of these reference materials uses a high-resolution

Test Structures for Referencing Electrical Linewidth Measurements to Silicon Lattice Parameters Using HRTEM

May 1, 2003
Author(s)
Richard A. Allen, B A. am Ende, Michael W. Cresswell, Christine E. Murabito, T J. Headley, William F. Guthrie, Loren W. Linholm, Colleen E. Hood, E. Hal Bogardus
A technique has been developed to determine the linewidths of the features of a prototype reference material for the calibration of CD (Critical-Dimension) metrology instruments. The reference features are fabricated in mono-crystalline-silicon with the

CD Reference Materials for Sub-Tenth Micrometer Applications

June 1, 2002
Author(s)
Michael W. Cresswell, E. Hal Bogardus, Joaquin (. Martinez, Marylyn H. Bennett, Richard A. Allen, William F. Guthrie, Christine E. Murabito, B A. am Ende, Loren W. Linholm
Prototype linewidth reference materials with Critical Dimensions (CDs) as narrow as 70 nm have been patterned in (110) silicon-on-insulator films. The sidewalls of the reference features are parallel, normal to the substrate surface, and have almost

Test Structures for Referencing Electronics Linewidth Measurements to Silicon Lattice Parameters Using HRTEM

April 8, 2002
Author(s)
Richard A. Allen, Michael W. Cresswell, Christine E. Murabito, William F. Guthrie, Loren W. Linholm, Colleen E. Hood, E. Hal Bogardus
A technique has been developed to certify the linewidths of the features of a prototype reference materials for the calibration of CD (Critical-Dimension) metrology instruments. The reference features are fabricated in mono-crystalline-silicon with the

Measurement of the Linewidth of Electrical Test-Structure Reference Features by Automated Phase-Contrast Image Analysis

April 1, 2002
Author(s)
B A. am Ende, Michael W. Cresswell, Richard A. Allen, T J. Headley, William F. Guthrie, Loren W. Linholm, H Bogardus, Christine E. Murabito
NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of

CD Reference Materials for Sub-Tenth Micrometer Applications

March 1, 2002
Author(s)
Richard A. Allen, Michael W. Cresswell, William F. Guthrie, Loren W. Linholm, H Bogardus, J V. Martinez de pinillos, B A. Am ende, Christine E. Murabito, M H. Bennett
Prototype linewidth reference materials with Critical Dimensions (CDs) as narrow as 70 nm have been patterned in (110) silicon-on-insulator films. The sidewalls of the reference features are parallel, normal to the substrate surface, and have almost

Electrical CD Metrology and Related Reference Materials

June 1, 2001
Author(s)
Michael W. Cresswell, Richard A. Allen
In the fabrication of integrated circuits, the steps of depositing a thin film of conducting material, patterning it photo-lithographically, and then etching it and stripping the remaining resist, are repeated several times as required levels are created

Test Chip for Electrical Linewidth of Copper-Interconnection Features and Related Parameters

February 6, 2001
Author(s)
Michael W. Cresswell, N. Arora, Richard A. Allen, Christine E. Murabito, Curt A. Richter, Ashwani K. Gupta, Loren W. Linholm, D. Pachura, P. Bendix
This paper reports a new electrical test structure for measuring the barrier-layer thickness and total physical linewidth of copper-cored interconnect features. The test structure has four critical dimension (CD) reference segments of different drawn

A Novel Method for Fabricating CD Reference Materials with 100 nm Linewidths

December 31, 2000
Author(s)
Richard A. Allen, Loren W. Linholm, Michael W. Cresswell, Colleen E. Hood
A technique has been developed to fabricate 100-nm CD reference features with I-line lithography by utilizing a unique characteristic of single-crystal silicon-on-insulator films: Under certain etch conditions, the edges of features align to

Comparison of Electrical CD Measurements and Cross-Section Lattice-Plane Counts of Sub-Micrometer Features Replicated in (100) Silicon-on-Insulator Material

June 1, 2000
Author(s)
Michael W. Cresswell, John E. Bonevich, T J. Headley, Richard A. Allen, Lucille A. Giannuzzi, Sarah C. Everist, Rathindra Ghoshtagore, Patrick J. Shea
Test structures of the type known as cross-bridge resistors have been patterned in (100) epitaxial silicon material that was seeded on Bonded and Etched-Back silicon-on-Insulator (BESOI) substrates. The electrical CDs (Critical Dimensions) of a limited

Linewidth Measurement Intercomparison on a BESOI Sample

June 1, 2000
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell, Rathindra Ghoshtagore
The effect of the instrument on the measurement must be known in order to generate an accurate linewidth measurement. Although instrument models exist for a variety of techniques, how does one assess the accuracy of these models? Intercomparisons between

Analysis of Current Flow in Mono-Crystalline Electrical Linewidth Structures

June 1, 1999
Author(s)
S Smith, I. A. Lindsay, Anthony Walton, Michael W. Cresswell, Loren W. Linholm, Richard A. Allen, M. Fallon, Alan Gundlach
The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of

Intercomparison of SEM, AFM, and Electrical Linewidths

June 1, 1999
Author(s)
John S. Villarrubia, Ronald G. Dixson, Samuel N. Jones, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell
Uncertainty in the locations of line edges dominates the uncertainty budget for high quality sub-micrometer linewidth measurements. For microscopic techniques like scanning electron microscopy (SEM) and atomic force microscopy (AFM), the image of the sharp

Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries

May 1, 1999
Author(s)
Michael W. Cresswell, Nadine Guillaume, Richard A. Allen, William F. Guthrie, Rathindra Ghoshtagore, James C. OwenI II, Z. Osborne, N. Sullivan, Loren W. Linholm
This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with non-planar geometries in monocrystalline silicon-on