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Test Structures for Referencing Electronics Linewidth Measurements to Silicon Lattice Parameters Using HRTEM

Published

Author(s)

Richard A. Allen, Michael W. Cresswell, Christine E. Murabito, William F. Guthrie, Loren W. Linholm, Colleen E. Hood, E. Hal Bogardus

Abstract

A technique has been developed to certify the linewidths of the features of a prototype reference materials for the calibration of CD (Critical-Dimension) metrology instruments. The reference features are fabricated in mono-crystalline-silicon with the sidewalls aligned to the (111) lattice planes. The calibration procedure consists of primary calibration via lattice-plane counting of selected samples using High-Resolution Transmission Electron Microscopy (HRTEM) with a transfer calibration via Electrical CD (ECD) test-structure metrology. A number of these prototype reference materials were calibrated and provided by the International SEMATECH for evaluation by its member companies. In this paper, we will describe the calibration procedure and show how the total uncertainty of less than 15 nm was derived.
Proceedings Title
Proc., 2002 ICMTS
Conference Dates
April 9-11, 2002
Conference Location
Cork, 1, EI
Conference Title
IEEE 2002 International Conference on Microelectronic Test Structures

Keywords

critical dimension, linewidth, metrology, semiconductor process control, standard , test structure, VLSI

Citation

Allen, R. , Cresswell, M. , Murabito, C. , Guthrie, W. , Linholm, L. , Hood, C. and Bogardus, E. (2002), Test Structures for Referencing Electronics Linewidth Measurements to Silicon Lattice Parameters Using HRTEM, Proc., 2002 ICMTS, Cork, 1, EI (Accessed April 20, 2024)
Created April 7, 2002, Updated October 12, 2021