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A Novel Method for Fabricating CD Reference Materials with 100 nm Linewidths

Published

Author(s)

Richard A. Allen, Loren W. Linholm, Michael W. Cresswell, Colleen E. Hood

Abstract

A technique has been developed to fabricate 100-nm CD reference features with I-line lithography by utilizing a unique characteristic of single-crystal silicon-on-insulator films: Under certain etch conditions, the edges of features align to crystallographic surfaces. In this paper we describe this technique, show results of the process, and present electrical critical dimension measurements that support the use of this technique for producing current and future generation of reference materials for the semiconductor industry.
Proceedings Title
Proc., IEEE International Conference on Microelectronic Test Structures
Issue
158
Conference Dates
March 13-16, 2000
Conference Location
Monterey, CA, USA

Citation

Allen, R. , Linholm, L. , Cresswell, M. and Hood, C. (2000), A Novel Method for Fabricating CD Reference Materials with 100 nm Linewidths, Proc., IEEE International Conference on Microelectronic Test Structures, Monterey, CA, USA (Accessed May 26, 2024)

Issues

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Created December 30, 2000, Updated October 12, 2021