U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 7501 - 7525 of 13218

Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges

January 1, 2001
Author(s)
Amanda N. Goyettes, Yicheng Wang, James K. Olthoff
… Positive ion bombardment plays an essential role in plasma processing, influencing etch rates, materials … Experimental determination of ion identities and energies in processing plasmas provides complementary data necessary … summary of ion compositions and energy distributions in inductively coupled discharges sustained in six …

Cu Electrodeposition for On-Chip Interconnections

January 1, 2001
Author(s)
Gery R. Stafford, Thomas P. Moffat, V D. Jovic, David R. Kelley, John E. Bonevich, Daniel Josell, Mark D. Vaudin, N G. Armstrong, W H. Huber, A Stanishevsky
… The electrochemical behavior of copper in copper sulfate - sulfuric acid, containing various … recrystallization at room temperature that results in a 23% drop in resistivity within a few hours of deposition. … Conference on Characterization and Metrology for ULSI Technology …

Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments

December 31, 1998
Author(s)
J. Vahakangas, Markku Lahti, M C. Chang, H Edward, C F. Machala, R S. Martin, V Zavyalov, J S. McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S. Neogi, D L. Ottaviani, Joseph Kopanski, J F. Machiando, Brian G. Rennex, J N. Nxulamo, Y Li, D J. Thomson
… or theoretical effort to characterize silicon doping in two dimensions. Recently, a strong progress has been made in quantitative scanning capacitance microscopy (SCM), … advanced SCM, SSRM, and TEM dopant profiling, participated in the study. Related process information and ID dopant …

Thin Film Ellipsometry Metrology

December 31, 1998
Author(s)
P. Durgapal, James R. Ehrstein, Nhan Van Nguyen
… Conference on Characterization and Metrology for ULSI Technology …

High-Resolution, High-Accuracy, Mid-IR (450 cm -1 less than or equal to} o less than or equal to} 4000 cm -1 ) Refractive Index Measurements in Silicon

March 1, 1998
Author(s)
Deane Chandler-Horowitz, Paul M. Amirtharaj, John R. Stoup
… this procedure is dependent upon the measurement error in the sample thickness, the absolute transmission values obtained from a sample-in and sample-out method, and the modeling of the influence … Conference on Characterization and Metrology for ULSI Technology …

The Effect of End of Range Loops on Transient Enhanced Diffusion in Si

April 1, 1997
Author(s)
K. S. Jones, K. Moller, M. Puga-Lambers, M. Law, David S. Simons, P Chi, B. Freer, J. Bernstein, L. Rubin, R. Simonton, R. G. Elliman, M. Petravic, P. S. Kringhoj
… of the 11th International Conference Ion Implantation Technology … of End of Range Loops on Transient Enhanced Diffusion in Si …

Defect Formation Mechanisms in Low Dose SIMOX Material

December 31, 1996
Author(s)
S. Bagchi, J. H. Lee, S. J. Krause, Peter Roitman
… Electrochemical Society International Symposium on SOI Technology and Devices … Defect Formation Mechanisms in Low Dose SIMOX Material …

D4I-Digital forensics framework for reviewing and investigating cyber attacks

December 26, 2019
Author(s)
Athanasios Dimitriadis, Boonserm Kulvatunyou, Nenad Ivezic, Ioannis Mavridis
… is prior knowledge about software and mechanisms used in the cyber-attack, i.e., they are not attack-agnostic. … not suffering from such issue, lack the ability to provide in-depth support to a cyber-attack investigation. The reason being that there are insufficient details in the examination and analysis phases of the processes where …

Programming Interfacial Porosity and Symmetry with Escherized Colloids

February 22, 2024
Author(s)
Nathan Mahynski, Vincent K. Shen
We simultaneously design the porosity and plane symmetry of self-assembling colloidal films by using isohedral tiles to determine the location and shape of enthalpically interacting surface patches on motifs being functionalized. The symmetries of both the
Displaying 7501 - 7525 of 13218
Was this page helpful?