Lee, J.
, Park, J.
, Krause, S.
, Venables, D.
and Roitman, P.
(1994),
Effect of Implantation Conditions on Defect Microstructure in Annealed SIMOX, Proc., Electrochemical Society International Symposium on SOI Technology and Devices, San Francisco, CA, USA
(Accessed January 19, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Effect of Implantation Conditions on Defect Microstructure in Annealed SIMOX
Published
Author(s)
J. H. Lee, J Park, S. J. Krause, D. Venables,
Proceedings Title
Proc., Electrochemical Society International Symposium on SOI Technology and Devices
Conference Dates
May 22-27, 1994
Conference Location
San Francisco, CA, USA
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1994, Updated October 12, 2021