Characterization of Thin SiO2 on Si by Spectroscopic Ellipsometry, Neutron Reflectometry, and X-Ray Reflectometry

Published

July 1, 1998

Author(s)

Curt A. Richter, Nhan Van Nguyen, Joseph Dura, Charles Majkrzak

Abstract

We compare the results of neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry measurements of a thin oxide film (=10 nm). These methods, which arise from three physically different scattering mechanisms, each determine physical properties of the film, and each has its distinctive strengths. This comparison of the extracted depth profiles of the physical properties gives multiple perspectives on the thickness and interfacial characteristics of an SiO₂ film on Si. This information improves our understanding of the material system and is helpful for refining the models used to analyze similar structures. The extracted thickness of the SiO₂ film is in agreement for these three methods.

Proceedings Title

Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology

Conference Dates

March 23-27, 1998

Conference Location

Gaithersburg, MD, USA

Pub Type

Conferences

Keywords

ellispometry, neutron reflectivity, reflectivity, silicon dioxide, spectroscopic ellipsometry, x-ray reflectivity

Citation

Richter, C. , Nguyen, N. , Dura, J. and Majkrzak, C. (1998), Characterization of Thin SiO₂ on Si by Spectroscopic Ellipsometry, Neutron Reflectometry, and X-Ray Reflectometry, Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, USA (Accessed April 24, 2024)