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Characterization of Thin SiO2 on Si by Spectroscopic Ellipsometry, Neutron Reflectometry, and X-Ray Reflectometry

Published

Author(s)

Curt A. Richter, Nhan Van Nguyen, Joseph Dura, Charles Majkrzak

Abstract

We compare the results of neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry measurements of a thin oxide film (=10 nm). These methods, which arise from three physically different scattering mechanisms, each determine physical properties of the film, and each has its distinctive strengths. This comparison of the extracted depth profiles of the physical properties gives multiple perspectives on the thickness and interfacial characteristics of an SiO2 film on Si. This information improves our understanding of the material system and is helpful for refining the models used to analyze similar structures. The extracted thickness of the SiO2 film is in agreement for these three methods.
Proceedings Title
Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology
Conference Dates
March 23-27, 1998
Conference Location
Gaithersburg, MD, USA

Keywords

ellispometry, neutron reflectivity, reflectivity, silicon dioxide, spectroscopic ellipsometry, x-ray reflectivity

Citation

Richter, C. , Nguyen, N. , Dura, J. and Majkrzak, C. (1998), Characterization of Thin SiO<sub>2</sub> on Si by Spectroscopic Ellipsometry, Neutron Reflectometry, and X-Ray Reflectometry, Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, USA (Accessed June 23, 2024)

Issues

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Created June 30, 1998, Updated October 12, 2021