Bagchi, S.
, Lee, J.
, Krause, S.
and Roitman, P.
(1996),
Defect Formation Mechanisms in Low Dose SIMOX Material, Proc., Electrochemical Society International Symposium on SOI Technology and Devices, Los Angeles, CA, USA
(Accessed December 9, 2024)
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Defect Formation Mechanisms in Low Dose SIMOX Material
Published
Author(s)
S. Bagchi, J. H. Lee, S. J. Krause,
Proceedings Title
Proc., Electrochemical Society International Symposium on SOI Technology and Devices
Volume
96-3
Issue
6
Conference Dates
May 5-10, 1996
Conference Location
Los Angeles, CA, USA
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1996, Updated October 12, 2021