High-Resolution, High-Accuracy, Mid-IR (450 cm-1 less than or equal to} ω less than or equal to} 4000 cm-1) Refractive Index Measurements in Silicon

Published

March 1, 1998

Author(s)

Deane Chandler-Horowitz, Paul M. Amirtharaj, John R. Stoup

Abstract

The real and imaginary part of the refractive index of silicon, n(ω) and k(ω), have been measured by using Fourier Transform Infrared (FTIR) transmission spectral data from a double-sided-polished IC grade Si wafer. An accurate independent mechanical measurement of the wafer thickness, t, was required, and two FTIR spectra were used: a high resolution (Δ}ω = 0.5 cm^-1) yielding typical channel spectrum dependent mainly on t and n(ω) and a low resolution (Δ}ω = 4.0 cm^-1) yielding an absorption spectrum dependent mainly on t and k(ω). Independent analysis of each spectrum gave initial n(ω) and k(ω) estimates which were then used together as starting point values for an iterative fit of the high- and low-resolution spectra successively. The accuracy of n(ω) and k(ω) values determined using this procedure is dependent upon the measurement error in the sample thickness, the absolute transmission values obtained from a sample-in and sample-out method, and the modeling of the influence of wafer thickness nonuniformity and the degree of incident light-beam collimation.

Proceedings Title

Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology

Conference Dates

March 23-27, 1998

Conference Location

Gaithersburg, MD, USA

Pub Type

Conferences

Keywords

double-sided polished, FTIR, interference fringes, silicon refractive index, wafer thickness

Citation

Chandler-Horowitz, D. , Amirtharaj, P. and Stoup, J. (1998), High-Resolution, High-Accuracy, Mid-IR (450 cm^-1 {less than or equal to} ω {less than or equal to} 4000 cm^-1) Refractive Index Measurements in Silicon, Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, USA (Accessed April 23, 2024)