U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Nanotechnology

Nanometrology

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
Published Date
Displaying 501 - 525 of 866

3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization

March 25, 2013
Author(s)
Jing Qin, Hui Zhou, Bryan M. Barnes, Ronald G. Dixson, Richard M. Silver
Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield microscopy

Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes

March 25, 2013
Author(s)
Joseph J. Kopanski, Muhammad Y. Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A. Richter
The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been applied to

Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope

March 25, 2013
Author(s)
Thomas M. Wallis, Atif A. Imtiaz, Alexandra E. Curtin, Pavel Kabos, Matthew D. Brubaker, Norman A. Sanford, Kristine A. Bertness
The scanning microwave microscope (SMM) is a tool for spatially-resolved microwave characterization of nanoelectronic materials and devices. The microscope incorporates a sharp, near-field probe, which measures local changes in reflected microwave signals

Experimental Evidence for s-Wave Pairing Symmetry in Superconducting Cu_x}Bi_2}Se_3} Single Crystals Using a Scanning Tunneling Microscope

March 12, 2013
Author(s)
Niv Levy, Tong Zhang, Jeonghoon Ha, Fred Sharifi, Alec Talin, Young Kuk, Joseph A. Stroscio
Topological superconductors (TS) are a newly predicted phase of matter which is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of its topological character, TS supports massless itinerant quasi

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

March 12, 2013
Author(s)
Tong Zhang, Niv Levy, Jeonghoon Ha, Young Kuk, Joseph A. Stroscio
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains

Where is the required lattice match in horizontal growth of nanowires?

March 12, 2013
Author(s)
Babak Nikoobakht
The surface-directed growth of nanowires (NWs) has been demonstrated for a number of semiconductors and is anticipated to be applicable to a wider group of materials. However, the epitaxial relationship between NWs and their underlying surface has not been

Interfacial Mechanical Properties of n-Alkylsilane Monolayers on Silicon Substrates

February 1, 2013
Author(s)
Brian G. Bush, Frank W. DelRio, Cherno Jaye, Daniel A. Fischer, Robert F. Cook
The interfacial properties of n-alkylsilane self-assembled monolayers on silicon were investigated by normal force spectroscopy and lateral force measurements and correlated with molecular structure via near-edge X-ray absorption fine structure (NEXAFS)

TSV REVEAL HEIGHT AND BUMP DIMENSION METROLOGY BY THE TSOM METHOD: FROM NANOMETER TO MICROMETER SCALE

January 23, 2013
Author(s)
Ravikiran Attota, Victor Vertanian, Steve Olson, Robert Edgeworth, Iqbal Ali, Craig Huffman, Pate Moschak, Harry Lazier, Elizabeth Lorenzini
The exceptional z-height resolution of TSOM, as well as very fast measurement time, is particularly important for high volume manufacturing. These two attributes make TSOM advantageous for 3D-stacked IC measurements of TSV reveal structures, and C4 bumps

Size-Dependent Structural Distortions

January 7, 2013
Author(s)
Michael D. Anderson, Colby L. Heideman, Qiyin Lin, Mary Smeller, Robert S. Kokenyesi, Andrew Herzing, Ian M. Anderson, Douglas A. Keszler, Paul Zschack, David C. Johnson
Recently we reported that intergrowth compounds [(MSe)1+y]m(TSe2)n, with M = Pb, Bi Ce} and T = W, Nb, Ta} self assemble from designed precursors. The values of m and n represent, respectively, the number of MSe and TSe2 structural units of the unit cell

Near-Field Scaning Microwave Microscope (NSMM)

December 31, 2012
Author(s)
Atif A. Imtiaz, Thomas M. Wallis, Pavel Kabos
Electromagnetic waves in the microwave frequency range are an essential tool for the investigation of material and device properties across a broad range of applications. Examples of materials of interest include: ferroelectric materials, ferromagnetic

High Resolution Length Fractionation of Surfactant Dispersed Carbon Nanotubes

December 23, 2012
Author(s)
Constantine Y. Khripin, Xiaomin X. Tu, Jeffrey A. Fagan, Ming Zheng
Length fractionation of colloidal carbon nanotube dispersions is required for many studies. Size- exclusion chromatography (SEC) has been reported as a reliable method for high resolution length fractionation of DNA-dispersed single-wall carbon nanotubes

Differentiation and characterization of isotopically modified silver nanoparticles in aqueous media using asymmetric-flow field flow fractionation coupled to optical detection and mass spectrometry

December 10, 2012
Author(s)
Julien C. Gigault, Vincent A. Hackley
The principal objective of this work was to develop and demonstrate a new methodology for silver nanoparticle (AgNP) detection and characterization based on asymmetric-flow field flow fractionation (A4F) coupled to multiple detectors and using stable
Was this page helpful?