TSV REVEAL HEIGHT AND BUMP DIMENSION METROLOGY BY THE TSOM METHOD: FROM NANOMETER TO MICROMETER SCALE
Ravikiran Attota, Victor Vertanian, Steve Olson, Robert Edgeworth, Iqbal Ali, Craig Huffman, Pate Moschak, Harry Lazier, Elizabeth Lorenzini
The exceptional z-height resolution of TSOM, as well as very fast measurement time, is particularly important for high volume manufacturing. These two attributes make TSOM advantageous for 3D-stacked IC measurements of TSV reveal structures, and C4 bumps and microbumps. This work focuses on the application of TSOM to through-silicon via (TSV) reveal height measurements in the 3-5 micron range, as well as to C4 and micro-bump features. In addition, the sensitivity of the technique to TEOS liner thickness of a few nm in 2 x 40 m TSVs as well as step coverage will be using simulations.
March 25-28, 2013
Frontiers of Characterization and Metrology for Nanoelectronics
TSOM, TSV, Cu reveal, nanometrology, 3D metrology, through-focus, optical microscope
, Vertanian, V.
, Olson, S.
, Edgeworth, R.
, Ali, I.
, Huffman, C.
, Moschak, P.
, Lazier, H.
and Lorenzini, E.
TSV REVEAL HEIGHT AND BUMP DIMENSION METROLOGY BY THE TSOM METHOD: FROM NANOMETER TO MICROMETER SCALE, Frontiers of Characterization and Metrology for Nanoelectronics
, Gaithersburg, MD
(Accessed November 28, 2023)