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TSV REVEAL HEIGHT AND BUMP DIMENSION METROLOGY BY THE TSOM METHOD: FROM NANOMETER TO MICROMETER SCALE

Published

Author(s)

Ravikiran Attota, Victor Vertanian, Steve Olson, Robert Edgeworth, Iqbal Ali, Craig Huffman, Pate Moschak, Harry Lazier, Elizabeth Lorenzini

Abstract

The exceptional z-height resolution of TSOM, as well as very fast measurement time, is particularly important for high volume manufacturing. These two attributes make TSOM advantageous for 3D-stacked IC measurements of TSV reveal structures, and C4 bumps and microbumps. This work focuses on the application of TSOM to through-silicon via (TSV) reveal height measurements in the 3-5 micron range, as well as to C4 and micro-bump features. In addition, the sensitivity of the technique to TEOS liner thickness of a few nm in 2 x 40 m TSV’s as well as step coverage will be using simulations.
Conference Dates
March 25-28, 2013
Conference Location
Gaithersburg, MD
Conference Title
Frontiers of Characterization and Metrology for Nanoelectronics

Keywords

TSOM, TSV, Cu reveal, nanometrology, 3D metrology, through-focus, optical microscope

Citation

Attota, R. , Vertanian, V. , Olson, S. , Edgeworth, R. , Ali, I. , Huffman, C. , Moschak, P. , Lazier, H. and Lorenzini, E. (2013), TSV REVEAL HEIGHT AND BUMP DIMENSION METROLOGY BY THE TSOM METHOD: FROM NANOMETER TO MICROMETER SCALE, Frontiers of Characterization and Metrology for Nanoelectronics , Gaithersburg, MD (Accessed May 25, 2024)

Issues

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Created January 23, 2013, Updated February 19, 2017