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High-Resolution Local Current Measurement of CdTe Solar Cells

Published

Author(s)

Heayoung Yoon, Dmitry A. Ruzmetov, Paul M. Haney, Marina S. Leite, Behrang H. Hamadani, Albert A. Talin, Nikolai B. Zhitenev

Abstract

We investigate local electronic properties of CdTe solar cells using electron beam to excite electron-hole pairs and evaluate spatially resolved photocurrent characteristics. Standard semiconductor processes were used to fabricate Ohmic metal contacts on the surface of p-type CdTe / n-type CdS device extracted from a commercial solar panel. An ion milling process was used to prepare cross-sections of the devices. Local injection of carriers was controlled by an acceleration voltage of electron beam (1 kV – 30 kV) in a scanning electron microscope (SEM), and the results were correlated with the local morphology and microstructure.
Conference Dates
June 4-8, 2012
Conference Location
Austin, TX
Conference Title
38th IEEE Photovoltaic Specialists Conference

Keywords

solar cells, thin film, CdTe, grain boundary, electron beam induced current, EBIC, cross section, focused ion beam

Citation

Yoon, H. , Ruzmetov, D. , Haney, P. , Leite, M. , Hamadani, B. , Talin, A. and Zhitenev, N. (2012), High-Resolution Local Current Measurement of CdTe Solar Cells, 38th IEEE Photovoltaic Specialists Conference, Austin, TX, [online], https://doi.org/10.1109/PVSC.2012.6318262 (Accessed April 18, 2024)
Created October 4, 2012, Updated November 10, 2018