High-Resolution Local Current Measurement of CdTe Solar Cells

Published

October 4, 2012

Author(s)

Heayoung Yoon, Dmitry A. Ruzmetov, Paul M. Haney, Marina S. Leite, Behrang H. Hamadani, Albert A. Talin, Nikolai B. Zhitenev

Abstract

We investigate local electronic properties of CdTe solar cells using electron beam to excite electron-hole pairs and evaluate spatially resolved photocurrent characteristics. Standard semiconductor processes were used to fabricate Ohmic metal contacts on the surface of p-type CdTe / n-type CdS device extracted from a commercial solar panel. An ion milling process was used to prepare cross-sections of the devices. Local injection of carriers was controlled by an acceleration voltage of electron beam (1 kV – 30 kV) in a scanning electron microscope (SEM), and the results were correlated with the local morphology and microstructure.

Conference Dates

June 4-8, 2012

Conference Location

Austin, TX

Conference Title

38th IEEE Photovoltaic Specialists Conference

Pub Type

Conferences

Download Paper

https://doi.org/10.1109/PVSC.2012.6318262

Keywords

solar cells, thin film, CdTe, grain boundary, electron beam induced current, EBIC, cross section, focused ion beam

Citation

Yoon, H. , Ruzmetov, D. , Haney, P. , Leite, M. , Hamadani, B. , Talin, A. and Zhitenev, N. (2012), High-Resolution Local Current Measurement of CdTe Solar Cells, 38th IEEE Photovoltaic Specialists Conference, Austin, TX, [online], https://doi.org/10.1109/PVSC.2012.6318262 (Accessed September 16, 2024)