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Nanotechnology

Nanometrology

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Displaying 476 - 500 of 855

Surface Chemical Transformations of UV irradiated Silica-Epoxy Nanocomposites

May 15, 2013
Author(s)
Justin M. Gorham, Tinh Nguyen, Deborah S. Jacobs, Coralie Bernard, Richard D. Holbrook
Silica nanoparticles (SiNPs) incorporated into a polymeric matrix, or silica nanocomposites (SiNCs), are used in a wide variety of commercially available products in numerous natural and artificial environments. Environmental factors, such as light, may

Transmission EBSD in the Scanning Electron Microscope

May 1, 2013
Author(s)
Roy H. Geiss, Katherine P. Rice, Robert R. Keller
A new method for obtaining Kikuchi diffraction patterns from thin specimens in transmission has been developed for use in the SEM, scanning electron microscope, using a conventional electron backscatter diffraction (EBSD) detector and with a slight

TSV Reveal height and bump dimension metrology by the TSOM method

April 30, 2013
Author(s)
Ravikiran Attota, Haesung Park, Victor H. Vartanian, Ndubuisi G. Orji, Richard A. Allen
Through-focus scanning optical microscopy (TSOM) transforms conventional optical microscopes into truly 3D metrology tools for nanoscale- to- microscale dimensional analysis with nanometer-scale sensitivity. Although not a resolution enhancement method

Use of TSOM for sub-11 nm node pattern defect detection and HAR features

April 30, 2013
Author(s)
Ravikiran Attota, Abraham Arceo, Bunday Benjamin
In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely be

Intercomparison between optical and x-ray scatterometry measurements of FinFET structures

April 8, 2013
Author(s)
Paul Lemaillet, Thomas Germer, Regis J. Kline, Daniel Sunday, Chengqing C. Wang, Wen-Li Wu
In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopic

Distributed Force Probe Bending Model of CD-AFM Bias

April 1, 2013
Author(s)
Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Richard M. Silver
Critical Dimension AFM (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 nm to 20 nm in diameter, are used. Recent studies have reported uncontrolled and significant

3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization

March 25, 2013
Author(s)
Jing Qin, Hui Zhou, Bryan M. Barnes, Ronald G. Dixson, Richard M. Silver
Reduced target dimensions requiring improved resolution and sensitivity have driven the need to use and analyze the phase and scattered frequency information available when using image-based scatterometry systems. One such system is scatterfield microscopy

Charge-Based Capacitance Measurements Circuits for Interface With Atomic Force Microscope Probes

March 25, 2013
Author(s)
Joseph J. Kopanski, Muhammad Y. Afridi, Chong Jiang, Michael Lorek, Timothy Kohler, Curt A. Richter
The charge based capacitance measurement (CBCM) technique is highly sensitive to small capacitances and capable integration of onto an AFM tip, thereby reducing stray and wire capacitance to the bare minimum. The CBCM technique has previous been applied to

Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope

March 25, 2013
Author(s)
Thomas M. Wallis, Atif A. Imtiaz, Alexandra E. Curtin, Pavel Kabos, Matthew D. Brubaker, Norman A. Sanford, Kristine A. Bertness
The scanning microwave microscope (SMM) is a tool for spatially-resolved microwave characterization of nanoelectronic materials and devices. The microscope incorporates a sharp, near-field probe, which measures local changes in reflected microwave signals
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