SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY

Published

March 25, 2013

Author(s)

Richard M. Silver, Bryan M. Barnes, Francois R. Goasmat, Hui Zhou, Martin Y. Sohn

Abstract

The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has become essential to explore alternative optical methods such as angle-resolved scatterfield microscopy, 193 nm short wavelength solutions, and coherent illumination. In this presentation we evaluate new optical technologies capable of extending high throughput defect inspection beyond the 22 nm node. We investigate source optimization for angle and polarization resolved illumination, measurement wavelengths down to 193 nm and a new approach for three-dimensional optical defect inspection validated with electromagnetic simulations and in the laboratory.

Proceedings Title

FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2013

Conference Dates

March 25-28, 2013

Conference Location

Gaithersburg, MD

Pub Type

Conferences

Keywords

Defect detection, illumination engineering, full 3-D reconstruction, electromagnetic modeling

Citation

Silver, R. , Barnes, B. , Goasmat, F. , Zhou, H. and Sohn, M. (2013), SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY, FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2013, Gaithersburg, MD (Accessed October 11, 2025)