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Nanotechnology

Nanometrology

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Displaying 451 - 475 of 866

Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects

November 13, 2013
Author(s)
Norman A. Sanford, David R. Diercks, Brian Gorman, R Kirchofer, Kristine A. Bertness, Matthew D. Brubaker
The field evaporation behavior of c-axis GaN nanowires was explored in two different laser-pulsed atom probe tomography (APT) instruments. Transmission electron microscopy imaging before and after atom probe tomography analysis was used to assist in

On the Determination of Carbon by PGAA

November 10, 2013
Author(s)
Rolf L. Zeisler, Rick L. Paul, Jeffrey A. Fagan, Zsolt R?vay, Stefan S?llradl
Determination of carbon was achieved with reduction of background in prompt gamma activation analysis.

Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

October 25, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M. Silver, Abraham Arceo
Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved

New Measurements on the Minimum and Maximum Sample Sizes in t-EBSD

October 9, 2013
Author(s)
Roy H. Geiss, Robert R. Keller, Katherine P. Rice
The technique of acquiring transmission electron diffraction patterns in the scanning electron microscope, SEM, using components of commercially available electron backscattered diffraction equipment, EBSD, normally used in a reflection geometry, was first

Local electrical characterizations of cadmium telluride solar cells using low energy electron beam

October 1, 2013
Author(s)
Heayoung Yoon, Paul M. Haney, Dmitry A. Ruzmetov, Hua Xu, Marina S. Leite, Behrang H. Hamadani, Albert A. Talin
We investigate local electronic properties of cadmium telluride solar cells using electron beam induced current (EBIC) measurements with current-collecting patterned contacts. EBIC measurements are performed with a spatial resolution as high as ≈20 nm both

Strong Casimir force reduction by metallic surface nanostructuring

September 27, 2013
Author(s)
Francesco Intravaia, Stefan T. Koev, Il Woong Jung, Albert A. Talin, Paul S. Davids, Ricardo Decca, Vladimir Aksyuk, Diego A. Dalvit, Daniel Lopez
The Casimir force is a quantum-mechanical interaction arising from vacuum fluctuations of the electromagnetic (EM) field and is technologically significant in micro- and nanomechanical systems. Despite rapid progress in nanophotonics, the goal of

A Missing Link in the Cascade Formation of High Symmetry Fullerene Cages

September 15, 2013
Author(s)
Dan Bearden, Jianyuan Zhang, Harry C. Dorn
Before the discovery of graphene, many versions of a “bottom-up” fullerene formation mechanism had been advanced starting with carbide (C2) that forms small carbon cluster chains and rings. However, in recent years evidence is emerging suggesting a “top

Generalized Tabletop EUV Coherent Diffractive Imaging in a Transmission Geometry

September 11, 2013
Author(s)
Justin M. Shaw, Bosheng Zhang, Matthew Seaberg, Daniel Adams, Dennis Gardner, Elizabeth Shanblatt, Henry C. Kapteyn, Margaret M. Murnane
We demonstrate the first generalized tabletop EUV coherent microscope that can image extended, non-isolated, non-periodic, objects. By implementing keyhole coherent diffraction imaging with curved mirrors and a tabletop high harmonic source, we demonstrate

Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction

September 5, 2013
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Francois R. Goasmat
There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimensions

Influence of Network Bond Percolation on the Thermal, Mechanical, Electrical and Optical Properties of high and low-k a-SiC:H Thin Films

August 25, 2013
Author(s)
Gheorghe Stan, Sean King, Jeff Bielefeld, Gaunghai Xu, William Lanford, Yusuke Matsuda, Reinhold Dauskardt, Jonathan F. Stebbins, Donald Hondongwa, Lauren Olasov, Brian Daly, Ming Liu, Dhanadeep Dutta, David W. Gidley
As demand for lower power and higher performance nano-electronic products increases, the semiconductor industry must adopt insulating materials with progressively lower dielectric constants (i.e. low-k) in order to minimize capacitive related power losses

Temperature-Programmed Electrospray-Differential Mobility Analysis for Characterization of Ligated Nanoparticles in Complex Media

August 12, 2013
Author(s)
De-Hao D. Tsai, Frank W. DelRio, John M. Pettibone, Pin A. Lin, Jiaojie Tan, Michael R. Zachariah, Vincent A. Hackley
In this study, an electrospray-differential mobility analyzer (ES-DMA) was operated with an aerosol flow-mode, temperature-programmed approach to enhance its ability to characterize the particle size distributions (PSDs) of nanoscale particles (NPs) in the

Through-focus scanning optical microscopy for defect inspection of EUV masks

August 12, 2013
Author(s)
Ravikiran Attota, Vibhu Jindal
The TSOM method provides three-dimensional nanoscale metrology using a conventional optical microscope. Substantial improvements in defect detectability using the TSOM method will be presented. The TSOM method shows potential to (i) detect phase defects on

Cold atomic beam ion source for focused ion beam applications

July 23, 2013
Author(s)
Brenton J. Knuffman, Adam V. Steele, Jabez J. McClelland
We report measurements and modeling performed on an ion source based on ionization of a laser-cooled atomic beam. We show a high brightness and a low energy spread, suitable for use in next-generation, high-resolution focused ion beam (FIB) systems. Our

Thermoelectric imaging of structural disorder in epitaxial graphene

July 14, 2013
Author(s)
Sanghee Cho, Stephen D. Kang, Wondong Kim, Eui-Sup Lee, Sung-Jae Woo, Ki-Jeong Kong, Ilyou Kim, Hyeong-Do Kim, Tong Zhang, Joseph A. Stroscio, Yong-Hyun Kim, Ho-Ki Lyeo
Many structural defects and strain fields develop during the preparation of thin films and nanostructures, with their origins being at the atomic level1,2. Sensitively detecting these subtle features with high sensitivity and resolution, and their

What's in a 'NYM?

July 1, 2013
Author(s)
Robert R. Keller
The field of electron microscopy, by its very diverse nature, abounds with acronyms: AEM, EF-TEM, ESEM, FE-SEM, HREM, HRTEM, HVEM, SEM, STEM, TEM, and VP-SEM, to name some instruments alone. Add in the different forms of data that these instruments might

On the Field Evaporation Behavior of c-axis GaN Nanowires in Laser-Pulsed Atom Probe Tomography

June 26, 2013
Author(s)
Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Brian Gorman, David R. Diercks, R Kirchofer
GaN has seen use in many applications such as photovoltaics, blue and ultraviolet lasers, and light-emitting diodes with additional research into expanded and new applications. GaN in the form of nanowires present additional possibilities due to their high

Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection

June 24, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity.
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