Attota, R.
and Jindal, V.
(2013),
Through-focus scanning optical microscopy for defect inspection of EUV masks, SPIE Newsroom Article, [online], http://www.spie.org
(Accessed December 13, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Through-focus scanning optical microscopy for defect inspection of EUV masks
Published
Author(s)
, Vibhu Jindal
Abstract
The TSOM method provides three-dimensional nanoscale metrology using a conventional optical microscope. Substantial improvements in defect detectability using the TSOM method will be presented. The TSOM method shows potential to (i) detect phase defects on EUV masks down to 13 nm SEVD, (ii) distinguish pits from bumps, and (iii) infer depth information of buried particles. The TSOM method is economical as it requires a low cost 193 nm optical microscope compared to an AIT, and has high through-put. As a result, the TSOM method appears to be a good method for detection of defects on EUV lithography masks.Citation
SPIE Newsroom Article
Pub Weblink
Pub Type
Websites
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created August 12, 2013, Updated February 19, 2017