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High-Resolution Photocurrent Microscopy Using Near-Field Cathodoluminescence of Quantum Dots

Published

Author(s)

Heayoung Yoon, Youngmin Lee, Christopher C. Bohn, Seung H. Ko, Anthony G. Gianfrancesco, Jonathan S. Steckel, Seth Coe-Sullivan, Albert A. Talin, Nikolai B. Zhitenev

Abstract

We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resolution Electron Beam Induced Current (EBIC) using a thin film solar cell (n-CdS / p-CdTe). Qualitatively, the observed image contrast is similar, showing strong enhancement of the carrier collection efficiency at the p-n junction and near the grain boundaries. The spatial resolution of the new technique, termed Q-EBIC (EBIC using quantum dot phosphor), is determined by the absorption depth of photons, ≈150 nm in the CdTe solar cell at the wavelength of ≈620 nm. The results demonstrate a new method for high-resolution, sub-wavelength photocurrent imaging measurement relevant for wide range of applications.
Citation
AIP Advances
Volume
3
Issue
6

Keywords

electron beam, quantum dot, phosphor, cathodoluminescence, photocurrent, CdTe

Citation

Yoon, H. , Lee, Y. , Bohn, C. , Ko, S. , Gianfrancesco, A. , Steckel, J. , , S. , Talin, A. and Zhitenev, N. (2013), High-Resolution Photocurrent Microscopy Using Near-Field Cathodoluminescence of Quantum Dots, AIP Advances, [online], https://doi.org/10.1063/1.4811275 (Accessed July 19, 2024)

Issues

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Created June 10, 2013, Updated November 10, 2018