Intercomparison between optical and x-ray scatterometry measurements of FinFET structures

Published

April 8, 2013

Author(s)

Paul Lemaillet, Thomas Germer, Regis J. Kline, Daniel Sunday, Chengqing C. Wang, Wen-Li Wu

Abstract

In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopic Muller matrix elements measurements were performed at various azimuthal angles for OCD, and X-ray diffraction intensities were collected for different incident angles in CD-SAXS measurements. A common trapezoidal model was used to compute the OCD and CD-SAXS signatures, using rigorous coupled wave (RCW) analysis and a 2D Fourier transform, respectively. Profile parameters, some material parameters, and instruments parameters were adjusted by a non-linear fitting procedure of the data. Results from both measurement techniques were compared and found in reasonable agreement with one another, although some of the parameters have differences that exceed the estimated uncertainties.

Proceedings Title

Metrology, Inspection, and Process Control for Microlithography XXVII

Conference Dates

February 24-28, 2013

Conference Location

San Jose, CA, US

Pub Type

Conferences

Keywords

CD-SAXS, ellipsometry, OCD, optical critical dimension, scatterometry, small angle x-ray scattering

Citation

Lemaillet, P. , Germer, T. , Kline, R. , Sunday, D. , Wang, C. and Wu, W. (2013), Intercomparison between optical and x-ray scatterometry measurements of FinFET structures, Metrology, Inspection, and Process Control for Microlithography XXVII, San Jose, CA, US (Accessed October 9, 2024)