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Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope

Published

Author(s)

Thomas M. Wallis, Atif A. Imtiaz, Alexandra E. Curtin, Pavel Kabos, Matthew D. Brubaker, Norman A. Sanford, Kristine A. Bertness

Abstract

The scanning microwave microscope (SMM) is a tool for spatially-resolved microwave characterization of nanoelectronic materials and devices. The microscope incorporates a sharp, near-field probe, which measures local changes in reflected microwave signals from a device under test (DUT). With proper calibration and modeling, a variety of parameters can be extracted from the measurements, including impedance [1],absolute capacitance [2,3], and dopant concentration [4,5]. Here, we describe two additional capabilities of the SMM related to dopant profiling. First, we discuss the capability to tune the contrast in d(S11)/dV images of variably-doped samples by adjusting the SMM operating frequency. Second, we demonstrate capabilities to locate a p-n junction within a GaN nanowire (NW) and observe changes in the junction morphology as a function of applied SMM bias.
Proceedings Title
Digest of the 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics
Conference Dates
March 25-28, 2013
Conference Location
Gaithersburg, MD

Keywords

dopant profiling, nanoelectronics, p-n junctions, scanning microwave microscopy

Citation

Wallis, T. , Imtiaz, A. , Curtin, A. , Kabos, P. , Brubaker, M. , Sanford, N. and Bertness, K. (2013), Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope, Digest of the 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=912802 (Accessed April 25, 2024)
Created March 25, 2013, Updated January 27, 2020