Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope

Published

March 25, 2013

Author(s)

Thomas M. Wallis, Atif A. Imtiaz, Alexandra E. Curtin, Pavel Kabos, Matthew D. Brubaker, Norman A. Sanford, Kristine A. Bertness

Abstract

The scanning microwave microscope (SMM) is a tool for spatially-resolved microwave characterization of nanoelectronic materials and devices. The microscope incorporates a sharp, near-field probe, which measures local changes in reflected microwave signals from a device under test (DUT). With proper calibration and modeling, a variety of parameters can be extracted from the measurements, including impedance [1],absolute capacitance [2,3], and dopant concentration [4,5]. Here, we describe two additional capabilities of the SMM related to dopant profiling. First, we discuss the capability to tune the contrast in d(S11)/dV images of variably-doped samples by adjusting the SMM operating frequency. Second, we demonstrate capabilities to locate a p-n junction within a GaN nanowire (NW) and observe changes in the junction morphology as a function of applied SMM bias.

Proceedings Title

Digest of the 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Conference Dates

March 25-28, 2013

Conference Location

Gaithersburg, MD

Pub Type

Conferences

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Keywords

dopant profiling, nanoelectronics, p-n junctions, scanning microwave microscopy

Citation

Wallis, T. , Imtiaz, A. , Curtin, A. , Kabos, P. , Brubaker, M. , Sanford, N. and Bertness, K. (2013), Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope, Digest of the 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=912802 (Accessed September 20, 2024)