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We present results for uncertainties in noise-parameter measurements, obtained using a Monte Carlo simulation of the measurements. Sets of data were generated to simulate measurements on a low-noise amplifier, with given uncertainties in the underlying
J J. Rodriguez, John V. Reichl, Zharadeen R. Parrilla, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Jih-Sheng Lai
Thermal component models are developed for multi-chip IGBT power electronic modules (PEM) and associated high-power converter heatsinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the
This paper reports the formulation and results of a Monte Carlo study of uncertainties in noise-parameter measurements. The simulator permits the computation of the dependence of the uncertainty in the noise parameters on uncertainties in the underlying
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, J L. Duliere, David W. Berning, Ranbir Singh
A detailed parameter extraction sequence for Silicon Carbide (SiC) power diode models is presented. The sequence is applicable to any SiC diode technology. Also, the model is demonstrated for a 1.5-kV, 10-A SiC Merged PiN Schottky (MPS); 5-kV, 20-A PiN; a
Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, David W. Berning, Allen R. Hefner Jr., Stephen Semancik, Richard E. Cavicchi
A monolithic CMOS micro-gas-sensor system, designed and fabricated in a standard CMOS process, is described. The gas-sensor system incorporates an array of four microhotplate-based gas-sensing structures. The system utilizes a thin film of tin-oxide (SnO 2
This paper reports results for uncertainties obtained using a Monte Carlo simulation of noise-parameter measurements. The simulator permits the computation of the dependence of the uncertainty in the noise parameters on uncertainties in the underlying
Mark H. Weatherspoon, Lawrence P. Dunleavy, Ali Boudiaf, James P. Randa
A new one-port noise temperature measurement technique is presented that uses receiver noise parameters for error correction. Improved accuracy in one-port noise temperature measurements made with commercial systems is demonstrated without using isolators
Carl Eklund, Roger Marks, K. L. Stanwood, S X. Wang
The broadband wireless access industry, which provides high-rate network connections to stationary sites, has matured to the point at which it now has a standard for second-generation wireless metropolitan area networks. IEEE Standard 802.16, with its
Muhammad Afridi, David W. Berning, Allen R. Hefner Jr., John S. Suehle, Mona E. Zaghloul, Eric Kelley, Zharadeen R. Parrilla, Colleen E. Hood
A high-speed thermal imaging system is used to investigate the dynamic thermal behavior of MEMS-based (MicroElectroMechanical Systems) microhotplate devices. These devices are suspended microstructures fabricated in CMOS technology and are used in various
This special issue of the IEEE EMC Transactions is in honor of Dr. Motohisa Kanda who passed away on June 12, 2000. Dr. Kanda, known to most of us simply as "Moto," was an important figure within the EMC community and served as Editor of the IEEE EMC
Allen R. Hefner Jr., David W. Berning, Ty R. McNutt, Alan Mantooth, Jih-Sheng Lai, Ranbir Singh
New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new
We present results for uncertainties in noise-parameter measurements, obtained using a Monte Carlo simulation of the measurements. Sets of data were generated to simulate measurements on a low-noise amplifier, with given uncertainties in the underlying
I address the issue of the definition and measurement of noise figure and parameters to characterize multiport devices, particularly differential amplifiers. A parameterization in terms of the noise matrix appears to be the most practical. the noise figure
Alpesh Bhobe, Christopher L. Holloway, Melinda Piket-May
Full wave finite-difference time-domain (FDTD) and a simplified 1D- finite-difference time-domain technique using the multi-conductor transmission line equations are applied to a delay line to determine its propagation characteristics. The output volatge
X Huang, H. Yu, Jih-Sheng Lai, Allen R. Hefner Jr., David W. Berning
The super junction (SJ) MOSFET exhibits conduction and switching properties similar to those of conventional power MOSFETs. In this paper we investigate possible benefits and problems associated with connecting SJ MOSFET in parallel for high-power
Ty R. McNutt, Allen R. Hefner Jr., A. Montooth, J L. Duliere, David W. Berning, Ranbir Singh
Dynamic compact electrothermal models are developed for Silicon Carbide Power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN diodes. The models are verified for on-state characteristics? temperature
Ranbir Singh, Allen R. Hefner Jr., David W. Berning, M. Palmer
This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were
An oscillation-based built in self-test (BIST) method is presented for functional testing of mixed signal devices. An integral component of this method of on-chip testing involves transforming an oscillating analog signal into a digital clock-like signal