Thermal Component Models for Electro-Thermal Analysis of Multichip Power Modules

Published

October 24, 2002

Author(s)

J J. Rodriguez, John V. Reichl, Zharadeen R. Parrilla, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Jih-Sheng Lai

Abstract

Thermal component models are developed for multi-chip IGBT power electronic modules (PEM) and associated high-power converter heatsinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the electro-thermal performance of high power converter systems. The thermal component models are parameterized in terms of structural and materials parameters so that they can be readily used to develop a library of component models for the various commercially available power modules. The paper presents model development and implementation in SABER, simulation results, and validation using experimental data.

Proceedings Title

Proc., 2002 IEEE Industry Application Society

Conference Dates

October 13-18, 2002

Conference Location

Pittsburgh, PA, USA

Conference Title

IEEE Industrial Applications Society Meeting

Pub Type

Conferences

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Keywords

IGBT, multi-chip power modules, thermal simulation, thermal model

Citation

Rodriguez, J. , Reichl, J. , Parrilla, Z. , Hefner Jr., A. , Berning, D. , Velez-Reyes, M. and Lai, J. (2002), Thermal Component Models for Electro-Thermal Analysis of Multichip Power Modules, Proc., 2002 IEEE Industry Application Society, Pittsburgh, PA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30113 (Accessed October 17, 2025)