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Thermal Component Models for Electro-Thermal Analysis of Multichip Power Modules

Published

Author(s)

J J. Rodriguez, John V. Reichl, Zharadeen R. Parrilla, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Jih-Sheng Lai

Abstract

Thermal component models are developed for multi-chip IGBT power electronic modules (PEM) and associated high-power converter heatsinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the electro-thermal performance of high power converter systems. The thermal component models are parameterized in terms of structural and materials parameters so that they can be readily used to develop a library of component models for the various commercially available power modules. The paper presents model development and implementation in SABER, simulation results, and validation using experimental data.
Proceedings Title
Proc., 2002 IEEE Industry Application Society
Conference Dates
October 13-18, 2002
Conference Location
Pittsburgh, PA, USA
Conference Title
IEEE Industrial Applications Society Meeting

Keywords

IGBT, multi-chip power modules, thermal simulation, thermal model

Citation

Rodriguez, J. , Reichl, J. , Parrilla, Z. , Hefner Jr., A. , Berning, D. , Velez-Reyes, M. and Lai, J. (2002), Thermal Component Models for Electro-Thermal Analysis of Multichip Power Modules, Proc., 2002 IEEE Industry Application Society, Pittsburgh, PA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30113 (Accessed July 25, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 23, 2002, Updated October 12, 2021