Characterization and Modeling of Silicon-Carbide Power Devices
Allen R. Hefner Jr., David W. Berning, Ty R. McNutt, Alan Mantooth, Jih-Sheng Lai, Ranbir Singh
New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new technology. Furthermore, the development of circuit simulator models is required to enable the devices to by fully utilized in the circuit and system design process. The purpose of this paper is to demonstrate device metrology and modeling methodologies required to facilitate market penetration of SiC power devices.
Proceedings of the International Semiconductor Device Research Symposium
December 5-7, 2001
Washington, DC, US
International Semiconductor Device Research Symposium
Hefner Jr., A.
, Berning, D.
, McNutt, T.
, Mantooth, A.
, Lai, J.
and Singh, R.
Characterization and Modeling of Silicon-Carbide Power Devices, Proceedings of the International Semiconductor Device Research Symposium, Washington, DC, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=18287
(Accessed December 5, 2023)