Characterization and Modeling of Silicon-Carbide Power Devices

Published

December 1, 2001

Author(s)

Allen R. Hefner Jr., David W. Berning, Ty R. McNutt, Alan Mantooth, Jih-Sheng Lai, Ranbir Singh

Abstract

New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new technology. Furthermore, the development of circuit simulator models is required to enable the devices to by fully utilized in the circuit and system design process. The purpose of this paper is to demonstrate device metrology and modeling methodologies required to facilitate market penetration of SiC power devices.

Proceedings Title

Proceedings of the International Semiconductor Device Research Symposium

Conference Dates

December 5-7, 2001

Conference Location

Washington, DC, US

Conference Title

International Semiconductor Device Research Symposium

Pub Type

Conferences

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Keywords

SiC diode, diode recovery, power electronics, Schottky diode, SiC MOSFET, RBSOA

Citation

Hefner Jr., A. , Berning, D. , McNutt, T. , Mantooth, A. , Lai, J. and Singh, R. (2001), Characterization and Modeling of Silicon-Carbide Power Devices, Proceedings of the International Semiconductor Device Research Symposium, Washington, DC, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=18287 (Accessed October 18, 2025)