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Characteristics and Ultilization of a New Class of Low On-Resistance MOS-Gated Power Device

Published

Author(s)

Jih-Sheng Lai, B M. Song, R Zhou, Allen R. Hefner Jr., David W. Berning, Chien-Chung Shen
Proceedings Title
Proc., IEEE Industrial Applications Society Meeting
Volume
37
Conference Dates
October 3-7, 1999
Conference Location
Phoenix, AZ, USA
Conference Title
IEEE Industrial Applications Society Meeting

Citation

Lai, J. , Song, B. , Zhou, R. , Hefner Jr., A. , Berning, D. and Shen, C. (2001), Characteristics and Ultilization of a New Class of Low On-Resistance MOS-Gated Power Device, Proc., IEEE Industrial Applications Society Meeting, Phoenix, AZ, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30823 (Accessed June 19, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 31, 2001, Updated October 12, 2021