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High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers

Published

Author(s)

Ranbir Singh, Allen R. Hefner Jr., David W. Berning, M. Palmer

Abstract

This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were used in order to get good on-state and stable blocking characteristics. A forward voltage drop of less than 5 V was observed at 500 A/cm2 in the entire 25-225 0C temperature range. The reverse recovery characteristics show only a modest 50% increase in the peak reverse recovery current from 25 0C to 225 0C. Measurements at a forward current density of 150 A/cm2 show that a 104x reduction in Qπ is obtained in 4H-SiC retifiers as compared to comparably rated Si reactifiers.
Proceedings Title
Proc., 2001 International Symposium on Power Semiconductor Devices and ICs
Conference Dates
June 4-7, 2001
Conference Location
Osaka, 1, JA

Keywords

PiN, rectifier, reverse recovery, SiC

Citation

Singh, R. , Hefner Jr., A. , Berning, D. and Palmer, M. (2001), High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers, Proc., 2001 International Symposium on Power Semiconductor Devices and ICs, Osaka, 1, JA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=14651 (Accessed May 30, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 6, 2001, Updated October 12, 2021