High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers
Ranbir Singh, Allen R. Hefner Jr., David W. Berning, M. Palmer
This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were used in order to get good on-state and stable blocking characteristics. A forward voltage drop of less than 5 V was observed at 500 A/cm2 in the entire 25-225 0C temperature range. The reverse recovery characteristics show only a modest 50% increase in the peak reverse recovery current from 25 0C to 225 0C. Measurements at a forward current density of 150 A/cm2 show that a 104x reduction in Qπ is obtained in 4H-SiC retifiers as compared to comparably rated Si reactifiers.
Proc., 2001 International Symposium on Power Semiconductor Devices and ICs
, Hefner Jr., A.
, Berning, D.
and Palmer, M.
High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers, Proc., 2001 International Symposium on Power Semiconductor Devices and ICs, Osaka, 1, JA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=14651
(Accessed September 30, 2023)