McNutt, T.
, Hefner Jr., A.
, Montooth, A.
, Duliere, J.
, Berning, D.
and Singh, R.
(2001),
Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator, Proc., Power Electronics Specialist Conference, Vancouver, 1, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=2526
(Accessed April 26, 2024)
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Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator
Published
Author(s)
, , A. Montooth, J L. Duliere, , Ranbir Singh
Abstract
Dynamic compact electrothermal models are developed for Silicon Carbide Power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN diodes. The models are verified for on-state characteristics? temperature dependence and reverse recovery characteristics? di/dt, dv/dt, and temperature dependence.Proceedings Title
Proc., Power Electronics Specialist Conference
Conference Dates
June 17-22, 2001
Conference Location
Vancouver, 1, CA
Pub Type
Conferences
Download Paper
Keywords
infrared thermal measurement, semiconductor device heating, transient thermal image
Citation
Created June 29, 2001, Updated October 12, 2021