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Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator

Published

Author(s)

Ty R. McNutt, Allen R. Hefner Jr., A. Montooth, J L. Duliere, David W. Berning, Ranbir Singh

Abstract

Dynamic compact electrothermal models are developed for Silicon Carbide Power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN diodes. The models are verified for on-state characteristics? temperature dependence and reverse recovery characteristics? di/dt, dv/dt, and temperature dependence.
Proceedings Title
Proc., Power Electronics Specialist Conference
Conference Dates
June 17-22, 2001
Conference Location
Vancouver, 1, CA

Keywords

infrared thermal measurement, semiconductor device heating, transient thermal image

Citation

McNutt, T. , Hefner Jr., A. , Montooth, A. , Duliere, J. , Berning, D. and Singh, R. (2001), Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator, Proc., Power Electronics Specialist Conference, Vancouver, 1, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=2526 (Accessed June 17, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 29, 2001, Updated October 12, 2021