Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator
Ty R. McNutt, Allen R. Hefner Jr., A. Montooth, J L. Duliere, David W. Berning, Ranbir Singh
Dynamic compact electrothermal models are developed for Silicon Carbide Power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN diodes. The models are verified for on-state characteristics? temperature dependence and reverse recovery characteristics? di/dt, dv/dt, and temperature dependence.
, Hefner Jr., A.
, Montooth, A.
, Duliere, J.
, Berning, D.
and Singh, R.
Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator, Proc., Power Electronics Specialist Conference, Vancouver, 1, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=2526
(Accessed December 1, 2023)