Parameter Extraction Sequence for Silicon Carbide Schottky, Merged PiN Schottky, and PiN Power Diode Models
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, J L. Duliere, David W. Berning, Ranbir Singh
A detailed parameter extraction sequence for Silicon Carbide (SiC) power diode models is presented. The sequence is applicable to any SiC diode technology. Also, the model is demonstrated for a 1.5-kV, 10-A SiC Merged PiN Schottky (MPS); 5-kV, 20-A PiN; a new prototype 10-kV PiN; and the new commercially available 600-V, 1-A Schottky diode. These component models are validated over a wide range of application conditions, including on-state characteristics' temperature dependence, and reverse recovery characteristics' di/dt, dv/dt, and temperature dependence. The extraction sequence is demonstrated for both the Schottky and PiN diode technologies.
Proc., 2002 Power Electronics Specialist Conference
, Hefner Jr., A.
, Mantooth, A.
, Duliere, J.
, Berning, D.
and Singh, R.
Parameter Extraction Sequence for Silicon Carbide Schottky, Merged PiN Schottky, and PiN Power Diode Models, Proc., 2002 Power Electronics Specialist Conference, Queensland, 1, AS, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33107
(Accessed December 8, 2023)