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Parameter Extraction Sequence for Silicon Carbide Schottky, Merged PiN Schottky, and PiN Power Diode Models

Published

Author(s)

Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, J L. Duliere, David W. Berning, Ranbir Singh

Abstract

A detailed parameter extraction sequence for Silicon Carbide (SiC) power diode models is presented. The sequence is applicable to any SiC diode technology. Also, the model is demonstrated for a 1.5-kV, 10-A SiC Merged PiN Schottky (MPS); 5-kV, 20-A PiN; a new prototype 10-kV PiN; and the new commercially available 600-V, 1-A Schottky diode. These component models are validated over a wide range of application conditions, including on-state characteristics' temperature dependence, and reverse recovery characteristics' di/dt, dv/dt, and temperature dependence. The extraction sequence is demonstrated for both the Schottky and PiN diode technologies.
Proceedings Title
Proc., 2002 Power Electronics Specialist Conference
Conference Location
Queensland, 1, AS
Conference Title
2002 Power Electronics Specialist Conference

Citation

McNutt, T. , Hefner Jr., A. , Mantooth, A. , Duliere, J. , Berning, D. and Singh, R. (2002), Parameter Extraction Sequence for Silicon Carbide Schottky, Merged PiN Schottky, and PiN Power Diode Models, Proc., 2002 Power Electronics Specialist Conference, Queensland, 1, AS, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33107 (Accessed June 22, 2024)

Issues

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Created July 31, 2002, Updated October 12, 2021