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Electronics

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Displaying 351 - 375 of 690

Single Photon Detector Comparison in a Quantum Key Distribution Link Testbed

October 25, 2006
Author(s)
Jonathan L. Habif, David S. Pearson, Robert Hadfield, Robert E. Schwall, Sae Woo Nam, Aaron J. Miller
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each

Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization

October 1, 2006
Author(s)
David W. Berning, Allen R. Hefner Jr., J J. Rodriguez, Colleen E. Hood, Angel Rivera
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

October 1, 2006
Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

On-Wafer Noise-Parameter Measurements at NIST

July 14, 2006
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched transistor

Terahertz radiometer design for traceable noise-temperature measurements

July 14, 2006
Author(s)
Eyal Gerecht, Dazhen Gu, James P. Randa, Dave K. Walker, Robert L. Billinger
We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

July 1, 2006
Author(s)
Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum
Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for

New reference standards and artifacts for nanoscale physical property characterization

July 1, 2006
Author(s)
Jon R. Pratt, John A. Kramar, Gordon Shaw, Richard Gates, Paul Rice, John M. Moreland
This paper provides an overview of calibration artifacts being developed at the National Institute of Standards and Technology (NIST) that are intended to aid the accurate determination of nanoscale physical properties across a broad range of applications

Reverse Noise Measurement and Use in Device Characterization

June 10, 2006
Author(s)
James P. Randa, Tom McKay, Susan L. Sweeney, Dave K. Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani
We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check

10 kV, 5A 4H-SiC Power DMOSFET

May 1, 2006
Author(s)
Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R. Hefner Jr.
In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with

Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices

March 22, 2006
Author(s)
Allen R. Hefner Jr.
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

Precision Measurement Method for Cryogenic Amplifier Noise Temperatures Below 5 K

March 1, 2006
Author(s)
James P. Randa, Eyal Gerecht, Dazhen Gu, Robert L. Billinger
We report precision measurements of the effective input noise temperature of a cryogenic (liquid helium temperature) MMIC amplifier at the amplifier reference planes within the cryostat. A method is given for characterizing and removing the effect of the

Reliability and Performance Limitations in SiC Power Devices

December 27, 2005
Author(s)
Ranbir Singh, Allen R. Hefner Jr.
Despite Silicon Carbide's (SiC's) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes

Electromagnetic Signatures of WLAN Cards and Network Security

December 21, 2005
Author(s)
Catherine A. Remley, Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Paul D. Hale, Michael McKinley, Emmanouil Antonakakis, A Karygiannis
The proliferation of wireless devices and the availability of new wireless applications and services raise new privacy and security concerns. Although network-layer anonymity protects the identities of the communication endpoints, the physical layer of

INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

December 1, 2005
Author(s)
James P. Randa, Susan L. Sweeney, Tom McKay, Dave K. Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik
We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the

Comparison of Gains Determined from the Extrapolation and Pattern Integration Methods

October 30, 2005
Author(s)
Michael H. Francis, Katherine MacReynolds, Jeffrey R. Guerrieri
Scientists at the National Institute of Standards (NIST) have measured the gain of several antennas using two different methods. The first method is the three-antenna extrapolation method developed at NIST in the early 1970s. The second method is the

Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits

October 1, 2005
Author(s)
Jih-Sheng Lai, H. Yu, J. Zhang, Y. Li, Kuang Sheng, J.H. Zhao, Allen R. Hefner Jr.
A normally-off SiC JFETs has been characterized under static and dynamic operating conditions. Two application oriented inverter circuits were constructed for additional tests under soft- and hard-switching conditions. The single-phase soft-switching

Electrical Methods for Mechanical Characterization of Interconnect Thin Films

September 1, 2005
Author(s)
Robert Keller, Cynthia A. Volkert, Roy H. Geiss, Andrew Slifka, David T. Read, Nicholas Barbosa, Reiner Monig
We describe the use of electrical methods for evaluating mechanical reliability and properties of patterned copper and aluminum interconnects on silicon substrates. The approach makes use of controlled Joule heating, which causes thermal strains in the

GerberTranslator: Moving towards new PCB standards

August 29, 2005
Author(s)
Matthew L. Aronoff, John V. Messina
This paper describes the key features of the NIST-developed software tool called ?GerberTranslator?. GerberTranslator is a software translator which automates the majority of the work in converting a printed circuit board (PCB) described in the industry

Uncertainties in Spherical Near-Field Antenna Measurements

August 3, 2005
Author(s)
Michael H. Francis, Ronald C. Wittmann, Jin-Seob Kang
A general approach is presented for estimating uncertainties in far-field parameters obtained from spherical near-field antenna measurements. The error is approximately bounded in terms of the uncertainty of the probe's receiving pattern and the
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