Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

10 kV, 5A 4H-SiC Power DMOSFET

Published

Author(s)

Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R. Hefner Jr.

Abstract

In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with a doping concentration of 6 x 1014 cm-3 for the drift layer, and a floating guard ring based edge termination structure was used. The gate oxide layer was formed by thermal oxidation at 1175oC, followed by an NO anneal. A peak effective channel mobility of 13 cm2/Vs was extracted from a test MOSFET with a W/L of 150 υm / 150 υm, built adjacent to the power DMOSFETs. A 4H-SiC DMOSFET with an active area of 0.15 cm2 showed a specific on-resistance of 111 mOhm}-cm2 at room temperature with a gate bias of 15 V. The device shows a leakage current of 3.3 ??A, which corresponds to a leakage current density of 11 υA-cm-2 at a drain bias of 10 kV.
Citation
IEEE Transactions on Electron Devices

Keywords

High-Voltage, power MOSFET, Silicon-Carbide

Citation

Ryu, S. , Krishnaswami, S. , Brett, H. , Richmond, J. , Agarwal, A. and Hefner Jr., A. (2006), 10 kV, 5A 4H-SiC Power DMOSFET, IEEE Transactions on Electron Devices, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32301 (Accessed October 10, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created April 30, 2006, Updated October 12, 2021
Was this page helpful?