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David T. Read, Walter Gerstle, Stewart Silling, Vinod K. Tewary, Richard Lehoucq
A theoretical framework, based upon the peridynamic model, is presented for analytical and computational simulation of electromigration. The framework allows four coupled physical processes to be modeled simultaneously: mechanical deformation, heat
Leonardo Hillkirk, Allen R. Hefner Jr., Robert W. Dutton
This paper presents a selection of results from numerical studies addressing various problems highly relevant to the operation of SiC power devices in power systems such as the speed optimization of high-voltage SiC PiN diodes and the operation of SiC
Using finite element analysis, we calculate the temperature range and the resulting cyclic Von Mises strain resulting from Joule heating, generated by the application of alternating current, applied to specimens representative of commercial copper
We discuss the sources of uncertainty in near-field measurements and their impact on far-field antenna parameters. The methods of estimating these uncertainties can be considered in three broad categories: theoretical estimation (analytical), computer
Dennis G. Camell, Robert Johnk, David R. Novotny, Chriss A. Grosvenor
This paper demonstrates the usefulness of time-domain processing to determine free-space antenna factors (FSAF) for electromagnetic compatibility (EMC) antennas. Our procedures are explained and data are provided for frequencies from 30 MHz to 9GHz. We
Robert Keller, Nicholas Barbosa, Roy H. Geiss, David T. Read
A novel approach for measuring thermal fatigue lifetime and ultimate strength of patterned thin films on substrates is presented. The method is based on controlled application of cyclic joule heating by means of low-frequency, high-density alternating
In this article, we describe two engineer-friendly events - the Automatic RF Techniques Group (ARFTG) Nonlinear Measurements Workshop and the Nonlinear Vector Network Analyzer (NVNA) Users' Forum - designed to let participants learn about and discuss
Dennis G. Camell, Robert T. Johnk, David R. Novotny, Chriss A. Grosvenor
This paper demonstrates the usefulness of time domain processing to determine free-space antenna factors,FSAF, for EMC antennas. Procedures are explained and data is provided from 30 MHz to 9 GHz. We investigate time gating of dense frequency packed
Jason B. Coder, John M. Ladbury, Christopher L. Holloway
We examine the current method for determining the shielding effectiveness of a material using nested reverberation chambers and show a simplified approach. Included in our examination is a discussion of the purpose for using a four antenna measurement
Dennis G. Camell, Michael Taylor, Robert T. Johnk, Benjamin Davis
This paper summarizes a joint NIST Industry measurement effort. Time domain and field uniformity measurements are used to verify a retro-fit of RF absorber in an EMC Compliance Chamber from 30 MHz to 6 GHz. Time gating and dense frequency packing of
Kate Remley, Jeffrey R. Guerrieri, Dylan Williams, David R. Novotny, Anthony B. Kos, Nelson Bryner, Nader Moayeri, Michael Souryal, Kang Lee, Steven Fick
This article reports on activities being carried out by the National Institute of Standards and Technology to ensure secure, reliable use of Radio-Frequency Identification (RFID) technology in homeland security and public safety applications. These
James R. Baker-Jarvis, Billy F. Riddle, Michael D. Janezic
In this paper we develop a model that can describe broadband dielectric response, and includes frequency-dependent loss and the effects of the local electric field. The model is based on a correlation-function approach that we previously developed using
Robert Hadfield, Jonathan L. Habif, Lijun Ma, Alan Mink, Xiao Tang, Sae Woo Nam
We explore the potential of high-speed nanowire superconducting single-photon detectors for quantum key distribution in fiber, over long distances (at 1550 nm) and at high bit rates (at 850 nm).
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. We describe the measurement method and the uncertainty analysis and present results of measurements on a very poorly matched transistor.
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize industriall and military power generation, transmission and distribution systems. The DARPA Wide Bandgap Semiconductor Technology (WBST)
Tam H. Duong, David Berning, Allen R. Hefner Jr., Keyue M. Smedley
This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single
Simone Lee, Thomas M. Wallis, John M. Moreland, Pavel Kabos, Y. C. Lee
Magnetic field imaging probes are developed in this work. Multi-material, MEMS-based cantilever probes were developed for high frequency magnetic field imaging. The basic configuration of the probe consists of a cantilever beam fabricated by surface
Simone Lee, Thomas Mitchell (Mitch) Wallis, John M. Moreland, Pavel Kabos, Y. C. Lee
Multimaterial, microelectromechanical systems-based cantilever probes were developed for high-frequency magnetic field imaging. The basic configuration of the probe consists of a cantilever beam fabricated using surface micromachining and bulk
Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Nino Canales, Benjamin Davis, Jason Veneman
The National Institute of Standards and Technology has developed several ultra-wideband, TEM Horn antennas with phase linearity, short impulse duration, and a near constant antenna factor. These are time-domain antennas used to measure impulsive fields
Ben N. Davis, Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, James R. Baker-Jarvis, Michael D. Janezic
Building materials are often incorporated into complex, multi-layer macrostructures that are simply not amenable to measurements using coax or waveguide sample holders. In response to this, an ultra-wideband free-field measurement system has been developed
Robert Keller, Roy H. Geiss, Nicholas Barbosa, Andrew Slifka, David T. Read
We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were
Lorentz microscopy was used to study the micromagnetic structure and magnetization reversal in magnetic tunnel junctions (MTJs) fabricated with different processing conditions including a preoxidation process. The authors find that the free layer in a MTJ
We introduce a novel transmission line method for measurements of the penetration depth of thin high temperature supervonducting (HTS) films. The method is based on the accurate extraction of the inductance-per-unit-length of a superconducting coplanar
This special article in Semiconductor International discusses NIST's role in metrology for the semiconductor industry as it moves to the nanoscale regime.
Ankush Varma, Muhammad Afridi, Akin Akturk, Paul Klein, Allen R. Hefner Jr., Bruce Jacob
Designers of SoCs with non-digital components, such as analog or MEMS devices, can currently use highlevel system design languages, such as SystemC, to model only the digital parts of a system. This is a significant limitation, since it makes key system