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Peridynamic Simulation of Electromigration

Published

Author(s)

David T. Read, Walter Gerstle, Stewart Silling, Vinod K. Tewary, Richard Lehoucq

Abstract

A theoretical framework, based upon the peridynamic model, is presented for analytical and computational simulation of electromigration. The framework allows four coupled physical processes to be modeled simultaneously: mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion. The dynamics of void and crack formation, and hillock and whisker growth can potentially be modeled. The framework can potentially be applied at several modeling scales: atomistic, crystallite, multiple crystallite, and macro. The conceptual simplicity of the model promises to permit many phenomena observed in microchips, including electromigration, thermo-mechanical crack formation, and fatigue crack formation, to be analyzed in a systematic and unified manner. Interfacial behavior between dissimilar crystallites and materials can also be handled in a natural way. A computational implementation of the theoretical framework is proposed, and a one-dimensional example problem is presented.
Citation
Cmc-Computers Materials & Continua
Volume
8

Keywords

diffusion, multi-physics, multi-scale, cracks, hillocks, voids, computational simulation, metallic thin films.

Citation

Read, D. , Gerstle, W. , Silling, S. , Tewary, V. and Lehoucq, R. (2008), Peridynamic Simulation of Electromigration, Cmc-Computers Materials & Continua, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854077 (Accessed April 14, 2021)
Created January 1, 2008, Updated February 19, 2017