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Status of the DARPA WBST High Power Electronics Program in SiC Device Development and Technology Transition

Published

Author(s)

Allen R. Hefner Jr., Sharon Beermann-Curtin

Abstract

The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize industriall and military power generation, transmission and distribution systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of this HV-HF SiC power semiconductor technology. This paper describes recent progress of the WBST HPE program in devices development and in circuit performance demonstrations of the devices. The paper also discusses the planned program to demonstrate a prototype 2.7 MVA Solid State Power Substation (SSPS) using the HV-HF SiC power device technology, and introduces the planned projects to establish reliability and manufacturability of the materials, devices, and packages for the HV-HF SiC power devices.
Proceedings Title
GOMACTech-
Conference Dates
March 19-22, 2007
Conference Location
Lake Buena Vista, FL, USA
Conference Title
GOMACTech

Keywords

high-voltage, power semiconductor, Silicon-carbide, Solid State Power Substation., wide band-gap

Citation

Hefner Jr., A. and Beermann-Curtin, S. (2007), Status of the DARPA WBST High Power Electronics Program in SiC Device Development and Technology Transition, GOMACTech-, Lake Buena Vista, FL, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32598 (Accessed February 8, 2023)
Created March 18, 2007, Updated October 12, 2021