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Physics-based Numerical Simulation for Design of High-Voltage, Extremely-High Current Density SiC Power Devices

Published

Author(s)

Leonardo Hillkirk, Allen R. Hefner Jr., Robert W. Dutton

Abstract

This paper presents a selection of results from numerical studies addressing various problems highly relevant to the operation of SiC power devices in power systems such as the speed optimization of high-voltage SiC PiN diodes and the operation of SiC thyristors under extremely- high-current pulse-power conditions. Various methods used to optimize the reverse-recovery performance of 4H-SiC PiN power diodes are studied, including base life time control, emitter efficiency reduction, and regional lifetime control. Pulse-power thyristors are also simulated to determine the limits of reliable performance due to self-heating-induced failure.
Proceedings Title
International Semiconductor Device Research Symposium
Conference Dates
December 12-14, 2007
Conference Location
College Park, MD, USA

Keywords

High voltage, High Current Density Semiconductor Power Devices, Electro-Thermal Transient Numerical Simulation, Reverse-Recovery Devise Optimization, Pulsed-Power Circuit Switching.

Citation

Hillkirk, L. , Hefner Jr., A. and Dutton, R. (2007), Physics-based Numerical Simulation for Design of High-Voltage, Extremely-High Current Density SiC Power Devices, International Semiconductor Device Research Symposium, College Park, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32841 (Accessed April 22, 2024)
Created December 11, 2007, Updated October 12, 2021