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INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

Published

Author(s)

James P. Randa, Susan L. Sweeney, Tom McKay, Dave K. Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik

Abstract

We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the results were compared. Each of the laboratories used a different measurement method, although two use similar commercial systems. Effects of different calibration values of |S("d"11)|,|S("d"22)|,and |Γ("d"opt)|, and have very low minimum noise figures (below 0.2 dB) over some of the frequency range. For the most part, the measurements at the different laboratoreis are in reasonable agreement, though there are discrepancies. It is also evident that the noise performance of the devices is better than our ability to measure it.
Proceedings Title
66TH ARFTG MICROWAVE MEASUREMENTS CONFERENCE
Conference Dates
December 1-2, 2005
Conference Location
Washington, DC, USA

Keywords

CMOS transistors, noise, noise parameters, on-wafer measurements

Citation

Randa, J. , Sweeney, S. , McKay, T. , Walker, D. , Greenberg, D. , Tao, J. , Mendez, J. , Rezvani, G. and Pekarik, J. (2005), INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH, 66TH ARFTG MICROWAVE MEASUREMENTS CONFERENCE, Washington, DC, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32120 (Accessed June 25, 2024)

Issues

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Created November 30, 2005, Updated October 12, 2021