Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices



Allen R. Hefner Jr.


The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, detailed characteristics of the devices being produced by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Proceedings Title
Conference Dates
March 20-23, 2006
Conference Location
San Diego, CA


High-voltage, Power semiconductor, Silicon-carbide, Solid State Power Substation, Wide band-gap.


Hefner, A. (2006), Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices, GOMACTech-06, San Diego, CA, [online], (Accessed April 24, 2024)
Created March 22, 2006, Updated January 27, 2020