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Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices

Published

Author(s)

Allen R. Hefner Jr.

Abstract

The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, detailed characteristics of the devices being produced by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Proceedings Title
GOMACTech-06
Conference Dates
March 20-23, 2006
Conference Location
San Diego, CA

Keywords

High-voltage, Power semiconductor, Silicon-carbide, Solid State Power Substation, Wide band-gap.

Citation

Hefner, A. (2006), Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices, GOMACTech-06, San Diego, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32207 (Accessed April 24, 2024)
Created March 22, 2006, Updated January 27, 2020