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Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices
Published
Author(s)
Allen R. Hefner Jr.
Abstract
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, detailed characteristics of the devices being produced by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Hefner, A.
(2006),
Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices, GOMACTech-06, San Diego, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32207
(Accessed October 16, 2025)