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Reverse Noise Measurement and Use in Device Characterization

Published

Author(s)

James P. Randa, Tom McKay, Susan L. Sweeney, Dave K. Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani

Abstract

We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check measurement results, to significantly reduce the uncertainty in Γ optu , to reduce the occurence of unphysical results, and possibly to directly measure or constrain parameters in model of transistors.
Conference Dates
June 11-13, 2006
Conference Location
SAN FRANCISCO, CA, USA
Conference Title
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM JUNE 11-13, 2006

Keywords

CMOS, noise, noise measurements, on-wafer measurements

Citation

Randa, J. , McKay, T. , Sweeney, S. , Walker, D. , Wagner, L. , Greenberg, D. , Tao, J. and Rezvani, G. (2006), Reverse Noise Measurement and Use in Device Characterization, 2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM JUNE 11-13, 2006, SAN FRANCISCO, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32218 (Accessed February 27, 2024)
Created June 9, 2006, Updated October 12, 2021